On current-voltage and capacitance-voltage characteristics of metal-semiconductor contacts
It is expected the fact that the current following across metal-semiconductor (MS) rectifying
contact named as Schottky barrier diode (SBDs) and effect of sample temperature on their …
contact named as Schottky barrier diode (SBDs) and effect of sample temperature on their …
A comparison of electrical characteristics of the Au/n-Si Schottky diodes with (ZnCdS: GO (1: 1) and (ZnCdS: GO (1: 0.5) doped PVP interlayer using current–voltage (I …
In this study, both the Au/(ZnCdS: GO (1: 1) doped PVP)/n-Si and Au/(ZnCdS: GO (1: 0.5)
doped PVP)/n-Si (MPS) type SDs which are named as SD1 and SD2, respectively, were …
doped PVP)/n-Si (MPS) type SDs which are named as SD1 and SD2, respectively, were …
On the conduction mechanisms of Au/(Cu2O–CuO–PVA)/n-Si (MPS) Schottky barrier diodes (SBDs) using current–voltage–temperature (I–V–T) characteristics
The temperature effect on the conduction mechanism of Au/Cu 2 O–CuO–PVA/n-Si (MPS)
type Schottky barrier diodes (SBDs) have been investigated in detail in the wide temperature …
type Schottky barrier diodes (SBDs) have been investigated in detail in the wide temperature …
Superior role of V2O5 and yttrium interface layers in enhancing MIS radical photodiode performance
In this study, Cu/n-Si Schottky diodes with V 2 O 5–Y insulating interface layer were
designed for the fabrication of metal/insulator/semiconductor (MIS) structures. The effects of …
designed for the fabrication of metal/insulator/semiconductor (MIS) structures. The effects of …
Comparison of the electrical and impedance properties of Au/(ZnOMn: PVP)/n-Si (MPS) type Schottky-diodes (SDs) before and after gamma-irradiation
The effect of 60 Co-iradiation) on the electrical parameters in the Au/(ZnOMn: PVP)/n-Si SDs
have been investigated using the current-voltage (I–V) and capacitance/conductance …
have been investigated using the current-voltage (I–V) and capacitance/conductance …
Illumination and voltage effects on the forward and reverse bias current–voltage (IV) characteristics in In/In2S3/p-Si photodiodes
The illumination and voltage effects on the IV measurements of the fabricated In/In 2 S 3/p-Si
photodiode were investigated in dark and under various illumination intensities (20–100 …
photodiode were investigated in dark and under various illumination intensities (20–100 …
Investigation of temperature dependent negative capacitance in the forward bias CV characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs)
In this study, a metal-insulator-semiconductor (MIS) type Schottky barrier diodes (SBDs)
were fabricated by growing a thin Al 2 O 3 insulator layer between Au/Ti and n-GaAs using …
were fabricated by growing a thin Al 2 O 3 insulator layer between Au/Ti and n-GaAs using …
Determination of temperature sensitivity and current-transport mechanisms of the GaAs-based MS contact
In this study, the GaAs-based metal-semiconductor (MS) contact was prepared as a
reference sample for comparison with other devices in the literature, especially some …
reference sample for comparison with other devices in the literature, especially some …
Electron trap** effects in SiC Schottky diodes: Review and comment
SiC devices exhibit a number of detrimental second order effects which are caused by
electrically active traps. The majority of studies into traps in SiC devices have been for SiC …
electrically active traps. The majority of studies into traps in SiC devices have been for SiC …
On the anomalous peak and negative capacitance in the capacitance–voltage (C–V) plots of Al/(% 7 Zn-PVA)/p-Si (MPS) structure
The frequency and voltage dependence of the capacitance–voltage (C–V) and conductance–
voltage (G/ω–V) characteristics of the Al/(% 7 Zn-doped PVA)/p-Si (MPS) structure were …
voltage (G/ω–V) characteristics of the Al/(% 7 Zn-doped PVA)/p-Si (MPS) structure were …