High aspect-ratio nanopores of nearly cylindrical geometry were fabricated by irradiation of
20 μm thick polycarbonate (PC) foils with Pb ions followed by UV sensitization and etching …

GaN is the most promising upgrade to the traditional Si-based radiation-hard technologies.
However, the underlying mechanisms driving its resistance are unclear, especially for …

This review concentrates on the specific properties and characteristics of damage structures
generated with high-energy ions in the electronic energy loss regime. Irradiation …

Here, we present new models to fit small angle X-ray scattering (SAXS) data for the
characterization of ion tracks in polymers. Ion tracks in polyethylene terephthalate (PET) …

We report the results of the nanoindentation tests of silicon nitride irradiated with Ar (46
MeV), Kr (107 MeV), Xe (167 MeV, 220 MeV) and Bi (710 MeV) ions. The behaviour of …

Small angle x-ray scattering was used to study the morphology of conical structures formed
in thin films of amorphous SiO 2. Samples were irradiated with 1.1 GeV Au ions at the GSI …

Abstract The evolution of 220 MeV Xe ion induced radiation damage in polycrystalline Si 3 N
4 is studied, within the fluence range 5× 10 11–2× 10 14 cm− 2, using transmission electron …

The annealing kinetics of the high energy ion damage in amorphous silicon dioxide (a-SiO
2) are still not well understood, despite the material's widespread application in material …

At present, silicon nitride is the only nitride ceramic in which latent ion tracks resulting from
swift heavy ion irradiation have been observed. Data related to the effects of SHIs on the …

In situ small angle X-ray scattering (SAXS) measurements of ion track etching in
polycarbonate foils are used to directly monitor the selective dissolution of ion tracks with …