Vertical PtOx/Pt/β-Ga2O3 Schottky diodes with high permittivity dielectric field plate for low leakage and high breakdown voltage
We demonstrate Schottky barrier engineering using PtO x/thin Pt Schottky contacts
combined with edge termination using a high permittivity dielectric (ZrO 2) field-plate for high …
combined with edge termination using a high permittivity dielectric (ZrO 2) field-plate for high …
Ultra-low reverse leakage in large area kilo-volt class β-Ga2O3 trench Schottky barrier diode with high-k dielectric RESURF
We introduce vertical Schottky barrier diodes (SBDs) based on β-Ga 2 O 3 with trench
architecture, featuring a high-permittivity dielectric RESURF structure. These diodes are …
architecture, featuring a high-permittivity dielectric RESURF structure. These diodes are …
Barrier height enhancement in β-Ga2O3 Schottky diodes using an oxygen-rich ultra-thin AlOx interfacial layer
Schottky barrier height (SBH) enhancement directly translates into increased breakdown
voltage (V BR) of β-Ga 2 O 3 Schottky barrier diodes (SBDs). In this work, ultra-thin (5, 10 …
voltage (V BR) of β-Ga 2 O 3 Schottky barrier diodes (SBDs). In this work, ultra-thin (5, 10 …
On the successful growth of bulk gallium oxide crystals by the EFG (Stepanov) method
DA Bauman, DI Panov, VA Spiridonov… - Functional Materials …, 2023 - World Scientific
Bulk crystals of β-Ga2O3 were successfully grown by the EFG (Stepanov) method. Analysis
of the material using an X-ray diffraction showed the high crystalline quality of the obtained …
of the material using an X-ray diffraction showed the high crystalline quality of the obtained …
Low QCVF 20A/1.4kV β-Ga2O3 Vertical Trench High-k RESURF Schottky Barrier Diode with Turn-on Voltage of 0.5V
We present a-Ga2O3 Trench Schottky Barrier Diode (SBD) featuring a high-permittivity (high-
k) dielectric RESURF and an atomic layer-deposited (ALD) Ru anode contact to engineer …
k) dielectric RESURF and an atomic layer-deposited (ALD) Ru anode contact to engineer …
Vertical Vertical β-Ga₂O₃ Power Diodes: From Interface Engineering to Edge Termination
Ultra wide bandgap semiconductor beta-gallium oxide (-Ga2O3) has the potential in
fabricating the next generation of power devices applied at high temperature and high …
fabricating the next generation of power devices applied at high temperature and high …
[PDF][PDF] Vertical β-Ga2O3 power electronics
β-Ga2O3 possesses a highly promising critical electric field of 8 MV/cm, allowing devices
with improved performance compared with other wide bandgap materials [1, 2]. The 4-inch …
with improved performance compared with other wide bandgap materials [1, 2]. The 4-inch …
Fast switching Ga2O3 Schottky barrier power diode with beveled-mesa and BaTiO3 field plate edge termination
Power devices rely on ideal edge termination to suppress the electric field crowding and
avoid premature breakdown before the material's critical field is reached. In this work, a …
avoid premature breakdown before the material's critical field is reached. In this work, a …
Deep-level transient spectroscopy of defect states at p-type oxide/β-Ga2O3 heterojunctions
Defects in p-type oxide/β-Ga 2 O 3 heterojunction diodes were investigated using p-type Cu
2 O as a case study. Diodes with polycrystalline and epitaxial Cu 2 O films were analyzed …
2 O as a case study. Diodes with polycrystalline and epitaxial Cu 2 O films were analyzed …
Hybrid Schottky and heterojunction vertical β-Ga 2 O 3 rectifiers
Junction barrier Schottky design Ga2O3 rectifiers allow for a combination of low turn-on
voltage and high breakdown voltage. Ni/Au/Ga2O3 Schottky rectifiers and NiO/Ga2O3 …
voltage and high breakdown voltage. Ni/Au/Ga2O3 Schottky rectifiers and NiO/Ga2O3 …