Since its invention in the 1950s, semiconductor solar cell technology has evolved in great
leaps and bounds. Solar power is now being considered as a serious leading contender for …

In this paper, we present an effective emitter passivation scheme using SiO 2/Al 2 O 3/SiN x
stacks. Our study shows that SiO 2/Al 2 O 3/SiN x stacks can well passivate both p+ and n+ …

We present an improved fabrication process for overlap** aluminum gate quantum dot
devices on Si/SiGe heterostructures that incorporates low-temperature inter-gate oxidation …

The book addresses the problem of passivation at the surface of crystalline silicon solar
cells. More specifically, it reports on a high-throughput, industrially compatible deposition …

Passivation of semiconductor surfaces is crucial to reduce carrier recombination losses and
thereby enhance the device performance of solar cells and other semiconductor devices …

Random Al back surface field (BSF) p-type Si solar cells are presented, where a stack of
Al2O3 and SiNx is used as rear surface passivation layer containing blisters. It is shown that …

Atomic layer deposition (ALD) of thin Al2O3 (≤ 10 nm) films is used to improve the rear
surface passivation of large‐area screen‐printed p‐type Si passivated emitter and rear cells …

In this paper, the passivation quality of crystalline silicon (c-Si) wafers, when passivated by
atomic layer deposited aluminum oxide (ALD AlO x), is investigated. Specifically, we …

Hafnium oxide (HfO x) is being investigated as a new candidate for the passivation layer of
silicon solar cells due to its excellent electrical and optical properties, such as high dielectric …

A next generation material for Si surface passivation is atomic layer deposited (ALD) Al 2 O
3. However, conventional time-resolved ALD is limited by its low deposition rate. Initially, a …