[HTML][HTML] Recent progress on micro-LEDs

A Pandey, M Reddeppa, Z Mi - Light: Advanced Manufacturing, 2024 - light-am.com
With the advent of technologies such as augmented/virtual reality (AR/VR) that are moving
towards displays with high efficiency, small size, and ultrahigh resolution, the development …

Cathodoluminescence in the scanning transmission electron microscope

M Kociak, LF Zagonel - Ultramicroscopy, 2017 - Elsevier
Cathodoluminescence (CL) is a powerful tool for the investigation of optical properties of
materials. In recent years, its combination with scanning transmission electron microscopy …

An ultrahigh efficiency excitonic micro-LED

A Pandey, J Min, M Reddeppa, Y Malhotra, Y **ao… - Nano Letters, 2023 - ACS Publications
High efficiency micro-LEDs, with lateral dimensions as small as one micrometer, are desired
for next-generation displays, virtual/augmented reality, and ultrahigh-speed optical …

A red-emitting micrometer scale LED with external quantum efficiency> 8%

A Pandey, Y **ao, M Reddeppa, Y Malhotra… - Applied Physics …, 2023 - pubs.aip.org
Significant efforts are being put into the development of efficient micrometer-scale light
emitting diodes (LEDs) for future display technologies due to their marked benefits over …

N-polar InGaN/GaN nanowires: overcoming the efficiency cliff of red-emitting micro-LEDs

A Pandey, Y Malhotra, P Wang, K Sun, X Liu… - Photonics Research, 2022 - opg.optica.org
A high efficiency, high brightness, and robust micro or sub-microscale red light emitting
diode (LED) is an essential, yet missing, component of the emerging virtual reality and future …

Recent advances and challenges in indium gallium nitride (inxga1-xn) materials for solid state lighting

R Kour, S Arya, S Verma, A Singh… - ECS Journal of Solid …, 2019 - iopscience.iop.org
In recent times, the demand for electrical energy is increased to such an extent that the
scientific research has to be focused on the development of materials that fulfil the growing …

Semiconductor nanowire light‐emitting diodes grown on metal: a direction toward large‐scale fabrication of nanowire devices

ATMG Sarwar, SD Carnevale, F Yang, TF Kent… - Small, 2015 - Wiley Online Library
Bottom‐up nanowires are attractive for realizing semiconductor devices with extreme
heterostructures because strain relaxation through the nanowire sidewalls allows the …

Strain-engineered N-polar InGaN nanowires: towards high-efficiency red LEDs on the micrometer scale

A Pandey, J Min, Y Malhotra, M Reddeppa… - Photonics …, 2022 - opg.optica.org
The absence of efficient red-emitting micrometer-scale light emitting diodes (LEDs), ie, LEDs
with lateral dimensions of 1 μm or less is a major barrier to the adoption of microLEDs in …

Semiconductor nanowire heterodimensional structures toward advanced optoelectronic devices

X Yan, Y Li, X Zhang - Nanoscale Horizons, 2024 - pubs.rsc.org
Semiconductor nanowires are considered as one of the most promising candidates for next-
generation devices due to their unique quasi-one-dimensional structures and novel physical …

Circumventing the miscibility gap in InGaN nanowires emitting from blue to red

E Roche, Y Andre, G Avit, C Bougerol… - …, 2018 - iopscience.iop.org
Widegap III-nitride alloys have enabled new classes of optoelectronic devices including light
emitting diodes, lasers and solar cells, but it is admittedly challenging to extend their …