Online junction temperature monitoring for SiC MOSFETs using turn-on delay time
Junction temperature is one of the most critical indicators not only for the converter design
and operation but also for power devices' reliability. Online monitoring of junction …
and operation but also for power devices' reliability. Online monitoring of junction …
Fabrication and Experimental Validation of Low Inductance SiC Power Module with Integrated Microchannel Cooler
With∽ 3x larger energy bandgap compared to silicon (Si), silicon carbide (SiC) power
devices offer lower specific conduction resistances and faster switching speed, enabling a …
devices offer lower specific conduction resistances and faster switching speed, enabling a …
Demonstration of wire bondless silicon carbide power module with integrated LTCC jet im**ement cooler
As wide-band-gap silicon carbide (SiC) power module increases in power density with high
switching speed, parasitic oscillation and localized hot spots caused by power rating …
switching speed, parasitic oscillation and localized hot spots caused by power rating …
Temperature duty cycle characteristics of parallel IGBTs
IGBT parallel connections are an effective way to increase the capacity of power electronic
converters. The junction temperature balance between IGBTs is one of the key factors in the …
converters. The junction temperature balance between IGBTs is one of the key factors in the …
[PDF][PDF] 并联 IGBT 占空比的温度特性建模与分析
黄海宏， 彭岚， 王海欣 - 电工技术学报, 2024 - dgjsxb.ces-transaction.com
摘要并联IGBT 是解决托卡马克(Tokamak) 装置中等离子体垂直位移快速控制电源容量逐渐增大
问题的有效途径. 而并联IGBT 之间的结温**衡是并联系统安全稳定运行的关键因素之一. 因此 …
问题的有效途径. 而并联IGBT 之间的结温**衡是并联系统安全稳定运行的关键因素之一. 因此 …
A Build-in Gate Driver Design for 1.7 kV SiC MOSFET Module with 32-chip Paralleled
Improving current capability of SiC MOSFET is an essential topic for SiC applications.
Modular package is a widely applied solution with outstanding power density and …
Modular package is a widely applied solution with outstanding power density and …