In this article, the development of mid-UV laser diodes based on the AlGaN materials system
is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm …

Polarization induced hole do** on the order of∼ 10 18 cm− 3 is achieved in linearly
graded Al x Ga 1− x N (x= 0.7∼ 1) layer grown by molecular beam epitaxy. Graded Al x Ga …

In this report, we demonstrate band gap tuning of the active region emission wavelength
from 365 nm to 250 nm in light emitting diodes fashioned from catalyst-free III-nitride …

Polarization do**: Reservoir effects of the substrate in AlGaN graded layers | Journal of
Applied Physics | AIP Publishing Skip to Main Content Umbrella Alt Text Umbrella Alt Text Close …

We show that bending of flexible light-emitting diodes based on polar group III–V nitride
structures can function as more than mechanically flexible devices through numerical …

Here, we demonstrate X-ray fitting through kinematical simulations of the intensity profiles of
symmetric reflections for epitaxial compositionally graded layers of AlGaN grown by …

An AlGaN deep ultraviolet laser diode design exploiting AlN substrates is presented,
featuring an inverse-tapered p-waveguide layer. The 2-D optoelectronic simulation predicts …

The paper considers new opportunities for design of various optoelectronic devices opened
by the use of polarization do** in III‐nitride heterostructures, including distributed …

This work presents the theoretical study on the polarization induced p-type do** of
undoped-AlInN graded cladding layers for the deep ultra-violet laser diode (LD) emitting at …

Using molecular beam epitaxy, we prepared seven p-type AlGaN samples of~ 25% in Al
content, including six samples with Mg-doped/un-doped AlGaN alternating-layer structures …