This review describes recent groundbreaking results in Si, Si/SiGe, and dopant-based
quantum dots, and it highlights the remarkable advances in Si-based quantum physics that …

One consequence of the continued downward scaling of transistors is the reliance on only a
few discrete atoms to dope the channel, and random fluctuations in the number of these …

This study presents the first in depth characterization of deep cryogenic electrical behavior of
a commercial 16 nm CMOS FinFET technology. This technology is well suited for a broad …

There is rapidly expanding interest in exploiting the spin of valence-band holes rather than
conduction-band electrons for spin qubit semiconductor circuits composed of coupled …

Dopant atoms are used to control the properties of semiconductors in most electronic
devices. Recent advances such as single-ion implantation,,,, have allowed the precise …

Atomically precise fabrication has an important role to play in develo** atom‐based
electronic devices for use in quantum information processing, quantum materials research …

This paper presents an in-depth DC characterization of a 22 nm FDSOI CMOS technology
down to deep cryogenic temperature, ie, 2.95 K. The impact of the back-gate voltage (V …

We have developed nanoscale double-gated field-effect-transistors for the study of electron
states and transport properties of single deliberately implanted phosphorus donors. The …

We show that single-electron transport through a single dopant can be achieved even in a
random background of many dopants without any precise placement of individual dopants …

We report on microwave-driven coherent electron transfer between two coupled donors
embedded in a silicon nanowire. By increasing the microwave frequency we observe a …