Nonvolatile memories are in strong demand due to the desire for miniaturization, high-speed
storage, and low energy consumption to fulfill the rapid developments of big data, the …

HfO 2-based thin films have raised considerable interest in ferroelectric memory devices due
to their thickness scalability and process compatibility with CMOS. Stress exhibits a …

Ferroelectric materials offer a low‐energy, high‐speed alternative to conventional logic and
memory circuitry. Hafnia‐based films have achieved single‐digit nm ferroelectricity, enabling …

Although organometal halide perovskites (OHPs) have desirable photovoltaic properties,
their photoelectrochemical (PEC) water‐splitting application for hydrogen production is …

Hafnium zirconium oxide (HZO) is an ideal candidate for the implementation of ferroelectric
memristive devices, due to its compatibility with the complementary metal‐oxide …

The discovery of ferroelectricity in HfO2-based thin films in 2011 1, 2 introduced the
possibility of integrating and scaling ferroelectric memory devices with three-dimensional …

Abstract The ferroelectricity of Hf 0.5 Zr 0.5 O 2 thin films makes them good candidate
materials for current and future electronic devices. To maximize the remanent polarization of …

Abstract Ferroelectricity in (Hf, Zr) O 2 films under 10 nm has been correlated with various
factors, including dopant, oxygen deficiency, strain, and surface energy. Owing to their …

A ferroelectric field-effect transistor (FeFET), capable of logic and memory functionalities in a
single device, is a promising three-terminal memtransistor that enables high-performance in …

Since the first report on the unexpected ferroelectricity of fluorite‐structure oxides in 2011,
this topic has provided a pathway for new research directions and opportunities. Based on …