The Ca Ga acceptor in GaN was studied using photoluminescence (PL) experiments and
first-principles calculations. The experimentally found–/0 transition level of the Ca Ga at …

The Heyd-Scuseria-Ernzerhof (HSE) hybrid functional has become a widely used tool for
theoretical calculations of point defects in semiconductors. It generally offers a satisfactory …

GaN samples were implanted with Be and annealed in different conditions in order to
activate the shallow Be Ga acceptor. Low-temperature photoluminescence spectra were …

GaN is an important semiconductor for energy-efficient light-emitting devices. Hydrogen
plays a crucial role in gallium nitride (GaN) growth and processing. It can form electrically …

Defects are crucial to understanding semiconductor materials and designing semiconductor-
based devices. In using the term “defects,” we include not only native point defects (such as …

Annealing is a critical process in modern GaN technology, essential for achieving p-type
conductivity by activating the Mg Ga acceptor, as first demonstrated by Shuji Nakamura in …

Gallium nitride (GaN) is a key material for the production of high frequency and high power
electronics as well as light emitting diodes. Optimum device performance requires a …