Electron beam pum** is a promising technique to fabricate compact and efficient light
emitters (lamps or lasers) in those spectral ranges where electrical injection is problematic …

The purpose of the chapter is to overview the current status of research in the field of II–VI
wide gap laser heterostructures for the “true” green (530− 550 nm), and yellow (570− 590 …

We present a study of undoped AlGaN/GaN separate confinement heterostructures
designed to operate as electron beam pumped ultraviolet lasers. We discuss the effect of …

The paper presents basic approaches in designing and growing by molecular beam epitaxy
of (Zn, Mg)(S, Se)-based laser heterostructures with multiple CdSe quantum dot (QD) sheets …

The properties of an electron‐beam‐pumped ZnSe‐based laser array consisting of 6 one‐
dimensional arrays, each comprising 10 single laser elements, have been studied. The peak …

The parameters of pulsed blue-violet (λ≈ 430 nm at T= 300 K) lasers based on an
AlGaN/InGaN/GaN structure with five InGaN quantum wells and transverse electron-beam …

The novel approaches to study the II–VI-based laser heterostructures using
cathodoluminescence and electron probe microanalysis techniques are described in detail …

Рассмотрены основные подходы при конструировании и выращивании методом
молекулярно-пучковой эпитаксии лазерных гетероструктур на основе системы (Zn …

Исследованы параметры импульсных сине-фиолетовых (l» 430 нм при Т= 300 К)
лазеров на основе структуры AlGaN/InGaN/GaN с пятью квантовыми ямами InGaN с …

Results on the molecular-beam epitaxy growth of short-period alternately-strained ZnS x Se
1− x/CdSe superlattices which are pseudomorphic to GaAs (001) substrates and possess …