Dielectric breakdown of oxide films in electronic devices
Dielectric breakdown is a sudden and catastrophic increase in the conductivity of an
insulator caused by electrical stress. It is one of the major reliability issues in electronic …
insulator caused by electrical stress. It is one of the major reliability issues in electronic …
[HTML][HTML] Dielectric breakdown in HfO2 dielectrics: Using multiscale modeling to identify the critical physical processes involved in oxide degradation
We use a multi-scale modeling to study the time-dependent dielectric breakdown of an
amorphous (a-) HfO 2 insulator in a metal–oxide–metal capacitor. We focus on the role …
amorphous (a-) HfO 2 insulator in a metal–oxide–metal capacitor. We focus on the role …
High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors
Memristor‐based electronic memory have recently started commercialization, although its
market size is small (~ 0.5%). Multiple studies claim their potential for hardware …
market size is small (~ 0.5%). Multiple studies claim their potential for hardware …
Insights into synaptic functionality and resistive switching in lead iodide flexible memristor devices
Neuromorphic platforms are gaining popularity due to their superior efficiency, low power
consumption, and adaptable parallel signal processing capabilities, overcoming the …
consumption, and adaptable parallel signal processing capabilities, overcoming the …
Imaging dielectric breakdown in valence change memory
Dielectric breakdown (DB) controls the failure, and increasingly the function, of
microelectronic devices. Standard imaging techniques, which generate contrast based on …
microelectronic devices. Standard imaging techniques, which generate contrast based on …
Enhanced tunneling electro-resistance ratio for ferroelectric tunnel junctions by engineering metal work function
YF Chen, LW Hsu, CW Hu, GT Lai… - IEEE Electron Device …, 2021 - ieeexplore.ieee.org
The structure of metal electrode/HfZrO x (HZO)/AlON/n+-Si was employed as the platform to
study how the effective work function (EWF) of the electrode affects the characteristics of the …
study how the effective work function (EWF) of the electrode affects the characteristics of the …
Advancement of gate oxides from SiO2 to high-k dielectrics in microprocessor and memory
Silicon and its native oxides (SiO 2) have led the continuous development in the integrated
circuits for decades. The excellent insulating properties of SiO 2 and silicon/SiO 2 interface …
circuits for decades. The excellent insulating properties of SiO 2 and silicon/SiO 2 interface …
Effect of electric field on defect generation and migration in
Understanding the effect of electric fields on defect creation and diffusion in metal oxides is
of fundamental importance for develo** accurate models of oxide degradation in …
of fundamental importance for develo** accurate models of oxide degradation in …
Impact of bilayered oxide stacks on the breakdown transients of metal–oxide–semiconductor devices: An experimental study
The role of the bilayered structure of the gate oxide on the dynamics of progressive
breakdown is systematically studied on Au/Cr/HfO 2/Al 2 O 3/InGaAs metal–oxide …
breakdown is systematically studied on Au/Cr/HfO 2/Al 2 O 3/InGaAs metal–oxide …
Study of direct tunneling and dielectric breakdown in molecular beam epitaxial hexagonal boron nitride monolayers using metal–insulator–metal devices
Direct tunneling and dielectric breakdown in molecular beam epitaxial hexagonal boron
nitride (h-BN) monolayers were studied based on Ni/h-BN/Ni metal–insulator–metal (MIM) …
nitride (h-BN) monolayers were studied based on Ni/h-BN/Ni metal–insulator–metal (MIM) …