Owing to the advantages of ultra-wide bandgap and rich material systems, gallium oxide (Ga
2 O 3) has emerged as a highly viable semiconductor material for new researches. This …

Abstract Beta-Gallium oxide (β-Ga 2 O 3) has emerged as a very feasible semiconductor
material for new explorations, thanks to its advantages of ultra-wide bandgap and diverse …

Gallium Oxide has undergone rapid technological maturation over the last decade, pushing
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …

In this Letter, we report a high-performance NiO/β-Ga 2 O 3 pn heterojunction diode with an
optimized interface by annealing. The electrical characteristics of the pn diode without …

β-Ga 2 O 3 vertical trench Schottky barrier diodes (SBDs) are realized, demonstrating
superior reverse blocking characteristics than the co-fabricated regular SBDs. Taking …

Here, we propose a p-type copper aluminum oxide (p-CuAlO 2) interlayer for the high
breakdown and low leakage current of β-Ga 2 O 3 Schottky barrier diodes (SBDs). The XPS …

As a promising ultra-wide bandgap (UWBG) semiconductor, gallium oxide (Ga 2 O 3) has
recently aroused increasing attention in the area for high-power electronics, power switch for …

The interface and bulk properties of∼ 20 nm hafnium-silicon-oxide (HfSiO x) dielectric
deposited by atomic layer deposition (ALD) on (001) β-Ga 2 O 3 were investigated …

As a promising ultra-wide bandgap semiconductor, gallium oxide (Ga 2 O 3) has attracted
increasing attention in recent years. The high theoretical breakdown electrical field (8 …

Power electronics are becoming increasingly more important, as electrical energy
constitutes 40% of the total primary energy usage in the USA and is expected to grow rapidly …