We present a comprehensive, up-to-date compilation of band parameters for the
technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs …

In this review article, we address key material parameters as well as the fabrication and
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …

We demonstrate the self-assembled formation of concentric quantum double rings with high
uniformity and excellent rotational symmetry using the droplet epitaxy technique. Varying the …

Photoluminescence of polycrystalline hexagonal boron nitride (hBN) was measured by
means of time-and energy-resolved spectroscopy methods. The observed bands are related …

Communication and information systems are subject to rapid and highly so phisticated
changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar …

We discuss the effects of a static long-range contribution− α/q 2 to the exchange-correlation
kernel f xc (q) of time-dependent density functional theory. We show that the optical …

Nanowires are promising platforms for realizing ultra-compact light sources for photonic
integrated circuits. In contrast to impressive progress on light confinement and stimulated …

Making use of a droplet-epitaxial technique, we realize nanometer-sized quantum ring
complexes, consisting of a well-defined inner ring and an outer ring. Electronic structure …

The incorporation of Au during vapor− liquid− solid nanowire growth might inherently limit
the performance of nanowire-based devices. Here, we assess the material quality of Au …

By employing various high-resolution metrology techniques we directly probe the material
composition profile within GaAs–Al0. 3Ga0. 7As core–shell nanowires grown by molecular …