Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …

The ferroelectricity in fluorite-structure oxides such as hafnia and zirconia has attracted
increasing interest since 2011. They have various advantages such as Si-based …

Discovery of robust yet reversibly switchable electric dipoles at reduced dimensions is
critical to the advancement of nanoelectronics devices. Energy bands flat in momentum …

Atomic-scale ferroelectrics are of great interest for high-density electronics, particularly field-
effect transistors, low-power logic, and nonvolatile memories. We devised a film with a …

Nonvolatile memories are in strong demand due to the desire for miniaturization, high-speed
storage, and low energy consumption to fulfill the rapid developments of big data, the …

The recent progress in ferroelectricity and antiferroelectricity in HfO2‐based thin films is
reported. Most ferroelectric thin film research focuses on perovskite structure materials, such …

Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …

The ferroelectric properties and crystal structure of doped HfO 2 thin films were investigated
for different thicknesses, electrode materials, and annealing conditions. Metal-ferroelectric …

Recently simulation groups have reported the lanthanide series elements as the dopants
that have the strongest effect on the stabilization of the ferroelectric non-centrosymmetric …

Since 2011, ferroelectric HfO2 has attracted growing interest in both fundamental and
application oriented groups. In this material, noteworthy wake‐up and fatigue effects alter …