Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories
Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …
in the memory arena over the last two decades. Its dielectric properties have been …
Review and perspective on ferroelectric HfO2-based thin films for memory applications
The ferroelectricity in fluorite-structure oxides such as hafnia and zirconia has attracted
increasing interest since 2011. They have various advantages such as Si-based …
increasing interest since 2011. They have various advantages such as Si-based …
[HTML][HTML] Roadmap on ferroelectric hafnia-and zirconia-based materials and devices
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
Scale-free ferroelectricity induced by flat phonon bands in HfO2
Discovery of robust yet reversibly switchable electric dipoles at reduced dimensions is
critical to the advancement of nanoelectronics devices. Energy bands flat in momentum …
critical to the advancement of nanoelectronics devices. Energy bands flat in momentum …
Ferroelectricity in layered bismuth oxide down to 1 nanometer
Atomic-scale ferroelectrics are of great interest for high-density electronics, particularly field-
effect transistors, low-power logic, and nonvolatile memories. We devised a film with a …
effect transistors, low-power logic, and nonvolatile memories. We devised a film with a …
HfO2-based ferroelectrics: From enhancing performance, material design, to applications
Nonvolatile memories are in strong demand due to the desire for miniaturization, high-speed
storage, and low energy consumption to fulfill the rapid developments of big data, the …
storage, and low energy consumption to fulfill the rapid developments of big data, the …
Unconventional Polarization-Switching Mechanism in Ferroelectrics and Its Implications
HfO 2-based ferroelectric thin films are promising for their application in ferroelectric devices.
Predicting the ultimate magnitude of polarization and understanding its switching …
Predicting the ultimate magnitude of polarization and understanding its switching …
Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films
The recent progress in ferroelectricity and antiferroelectricity in HfO2‐based thin films is
reported. Most ferroelectric thin film research focuses on perovskite structure materials, such …
reported. Most ferroelectric thin film research focuses on perovskite structure materials, such …
Lanthanum-doped hafnium oxide: a robust ferroelectric material
Recently simulation groups have reported the lanthanide series elements as the dopants
that have the strongest effect on the stabilization of the ferroelectric non-centrosymmetric …
that have the strongest effect on the stabilization of the ferroelectric non-centrosymmetric …
Stabilizing the ferroelectric phase in doped hafnium oxide
The ferroelectric properties and crystal structure of doped HfO 2 thin films were investigated
for different thicknesses, electrode materials, and annealing conditions. Metal-ferroelectric …
for different thicknesses, electrode materials, and annealing conditions. Metal-ferroelectric …