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Influence of ionizing radiation on admittance measurements of Au/TiO2/n-Si (MIS) capacitor
M İzdeş, R Ertuğrul Uyar, A Tataroğlu - Journal of Materials Science …, 2024 - Springer
This study aimed to investigate the influence of ionizing radiation on the admittance
measurements of Titanium dioxide (TiO2)-based metal-insulator-semiconductor (MIS) …
measurements of Titanium dioxide (TiO2)-based metal-insulator-semiconductor (MIS) …
Effect of high-radiation-dose-induced structural modifications of HfSiO4/n-Si on electrical characteristics
High-k/n-Si structures were formed with HfSiO 4 films annealed at the temperature range of
RT (room temperature)-900° C and radiation-induced structural modifications were …
RT (room temperature)-900° C and radiation-induced structural modifications were …
Low-toxic gelcasting of zircon ceramics
W Wan, L Cao, S Yin, J Luo, Y Zhang, J Zhang… - Ceramics …, 2024 - Elsevier
Zircon (ZrSiO 4) ceramics are highly valued in various industries due to their exceptional
physical and chemical properties. In the present work, zircon ceramics with high-density and …
physical and chemical properties. In the present work, zircon ceramics with high-density and …
Ob-Servo Sanguis irradiator dose map** at the Philippine Nuclear Research Institute using MCNP5 annular ring voxels
Dosimetry in radiation processing is a prerequisite for regulating the delivered absorbed
dose to a material. Dosimetric measurements, however, are incapable of measuring the …
dose to a material. Dosimetric measurements, however, are incapable of measuring the …
[PDF][PDF] Investigation of Electrical Characteristics and Surface Morphology of Vanadium Oxide-Vo 2 Mos Devices
U Gürer, E Yilmaz - RAP Conf. Proc, 2021 - rap-proceedings.org
In this study, the electrical characteristics and surface morphology of Vanadium Oxide-VO2
MOS Devices have been investigated. VO2 thin films were deposited onto n-type (100) …
MOS Devices have been investigated. VO2 thin films were deposited onto n-type (100) …
[PDF][PDF] Structural Properties And Radiation Response Of Neodymium Oxide
Neodymium oxide (Nd2O3) was deposited by the sol–gel method on a P-type< 100> silicon
wafer. The chemical characterization of neodymium oxide was performed by Fourier …
wafer. The chemical characterization of neodymium oxide was performed by Fourier …