Background: The insatiable need for low-power and high-performance integrated circuit (IC)
results in the development of alternative options for metal oxide semiconductor field effect …

In this paper, we present simulation results obtained using SILVACO TCAD tools for a 3-D
silicon on insulator (SOI) n-FinFET structure with a gate length of 8 nm at 300K. The effects …

In this paper, we propose and analyze three different nanowire FinFETs: Silicon, Germanium
and SiGe nanowire FinFETs. We find that the logic performance parameters such as I on/I off …

Particularly in advanced technology nodes, interconnects significantly affect the power,
performance, area and reliability of integrated circuits. Requirements of high integration …

FinFETs have emerged as the solution to short channel effects at the 22-nm technology
node and beyond. Here, the effect of fin shape on the leakage currents like Gate Induced …

The Fin Field-Effect Transistor (FinFET) has emerged as a promising alternative to
conventional CMOS (complementary metal-oxide-semiconductor) planar transistors in …

Emission, Laser Voltage Imaging, and Laser Voltage Probing data have been acquired from
dual-gate fin field-effect-transistors (FinFETs). These optical probing techniques are applied …

Techniques for quantifying ADfin in FINFET technology are provided. In one aspect, a
method for quantifying ADfin between a pair of long channel FINFET devices includes the …

Using FinFET for designing of SRAM cells has shown a great deal of advantages over
planar bulk devices due to the additional control on the gates and due to fully depleted …

Low noise amplifiers (LNA) are the basic building blocks of RF analog circuitry. Hence it is
mandatory to design the LAN block in an optimized way to enhance the entire …