Defects and reliability of GaN‐based LEDs: review and perspectives
Herein, the main factors and mechanisms that limit the reliability of gallium nitride (GaN)‐
based light‐emitting diodes (LEDs) are reviewed. An overview of the defects …
based light‐emitting diodes (LEDs) are reviewed. An overview of the defects …
Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review
This article critically reviews the architectural novelties, emerging materials (substrate,
buffer, barrier & contact materials), technological advancements, processing techniques …
buffer, barrier & contact materials), technological advancements, processing techniques …
GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
Buffer traps in Fe-doped AlGaN/GaN HEMTs: Investigation of the physical properties based on pulsed and transient measurements
This paper presents an extensive investigation of the properties of the trap with activation
energy equal to 0.6 eV, which has been demonstrated to be responsible for current collapse …
energy equal to 0.6 eV, which has been demonstrated to be responsible for current collapse …
Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs
In this letter, we report a detailed experimental investigation of the time-dependent
breakdown induced by forward gate stress in GaN-based power HEMTs with a p-type gate …
breakdown induced by forward gate stress in GaN-based power HEMTs with a p-type gate …
Stability and reliability of lateral GaN power field-effect transistors
JA Del Alamo, ES Lee - IEEE Transactions on Electron Devices, 2019 - ieeexplore.ieee.org
GaN electronics constitutes a revolutionary technology with power handling capabilities that
amply exceed those of Si and other semiconductors in many applications. RF, microwave …
amply exceed those of Si and other semiconductors in many applications. RF, microwave …
Identification of trap states in p-GaN layer of a p-GaN/AlGaN/GaN power HEMT structure by deep-level transient spectroscopy
In this work, the deep-level transient spectroscopy (DLTS) is conducted to investigate the
gate stack of the p-GaN gate HEMT with Schottky gate contact. A metal/p-GaN/AlGaN/GaN …
gate stack of the p-GaN gate HEMT with Schottky gate contact. A metal/p-GaN/AlGaN/GaN …
Temperature-Dependent Dynamic in GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage
M Meneghini, P Vanmeerbeek… - IEEE transactions on …, 2015 - ieeexplore.ieee.org
This paper reports an investigation of the trap** mechanisms responsible for the
temperature-dependent dynamic-R ON of GaN-based metal-insulator-semiconductor (MIS) …
temperature-dependent dynamic-R ON of GaN-based metal-insulator-semiconductor (MIS) …
Low-loss and high-voltage III-nitride transistors for power switching applications
M Kuzuhara, H Tokuda - IEEE Transactions on Electron …, 2014 - ieeexplore.ieee.org
This paper describes recent technological advances on III-nitride-based transistors for
power switching applications. Focuses are placed on the progress toward enhancing the …
power switching applications. Focuses are placed on the progress toward enhancing the …
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs
R ON degradation due to stress in GaN-based power devices is a critical issue that limits,
among other effects, long-term stable operation. Here, by means of 2-D device simulations …
among other effects, long-term stable operation. Here, by means of 2-D device simulations …