Owing to atomically thin structure and high-activity surface, two-dimensional (2D) non-
layered materials exhibit many intriguing properties, rendering them a bright application …

Structuring Si, ranging from nanoscale to macroscale feature dimensions, is essential for
many applications. Metal‐assisted chemical etching (MaCE) has been developed as a …

2D nonlayered materials have attracted intensive attention due to their unique surface
structure and novel physical properties. However, it is still a great challenge to realize the 2D …

The performance of a graphene/Ge Schottky junction near-infrared photodetector is
significantly enhanced by inserting a thin Al2O3 interfacial layer between graphene and Ge …

Organic–inorganic hybrid perovskite has attracted extensive research due to its excellent
optoelectronic properties and is a competitive candidate material for a new generation of …

Defying the isotropic nature of traditional chemical etch, metal-assisted chemical etching
(MacEtch) has allowed spatially defined anisotropic etching by using patterned metal …

Abstract β-Ga 2 O 3, a promising ultra-wide bandgap material for future high-power
electronics and deep-ultraviolet optoelectronics applications, has drawn tremendous …

β-Ga2O3, with a bandgap of∼ 4.6–4.9 eV and readily available bulk substrates, has
attracted tremendous interest in the wide bandgap semiconductor community. Producing …

Silicon carbide (SiC) is a wide bandgap third‐generation semiconductor well suited for
harsh environment power electronics, micro and nano electromechanical systems, and …

We report an enhanced performance of flexible titanium nitride/germanium-tin (TiN/GeSn)
photodetectors (PDs) with an extended photodetection range based on sub-bandgap …