ZnO Schottky barriers and Ohmic contacts
ZnO has emerged as a promising candidate for optoelectronic and microelectronic
applications, whose development requires greater understanding and control of their …
applications, whose development requires greater understanding and control of their …
Group‐III sesquioxides: growth, physical properties and devices
H Von Wenckstern - Advanced Electronic Materials, 2017 - Wiley Online Library
The group‐III sesquioxides possess material properties that render them interesting for
applications such as high‐power rectifiers and transistors, solar‐blind UV detectors and inter …
applications such as high‐power rectifiers and transistors, solar‐blind UV detectors and inter …
[LIBRO][B] Physics of semiconductors
M Grundmann - 2010 - Springer
Semiconductor electronics is commonplace in every household. Semiconductor devices
have enabled economically reasonable fiber-based optical communication, optical storage …
have enabled economically reasonable fiber-based optical communication, optical storage …
Cuprous iodide–ap‐type transparent semiconductor: History and novel applications
Halide semiconductors stand at the very beginning of semiconductor science and
technology. CuI was reported as the first transparent conductor, and the first field effect …
technology. CuI was reported as the first transparent conductor, and the first field effect …
Highly enhanced acetone sensing performances of porous and single crystalline ZnO nanosheets: high percentage of exposed (100) facets working together with …
Y **ao, L Lu, A Zhang, Y Zhang, L Sun… - ACS applied materials …, 2012 - ACS Publications
Porous and single crystalline ZnO nanosheets, which were synthesized by annealing
hydrozincite Zn5 (CO3) 2 (OH) 6 nanoplates produced with a water/ethylene glycol …
hydrozincite Zn5 (CO3) 2 (OH) 6 nanoplates produced with a water/ethylene glycol …
Room-temperature Domain-epitaxy of Copper Iodide Thin Films for Transparent CuI/ZnO Heterojunctions with High Rectification Ratios Larger than 109
CuI is a p-type transparent conductive semiconductor with unique optoelectronic properties,
including wide band gap (3.1 eV), high hole mobility (> 40 cm2 V− 1 s− 1 in bulk) and large …
including wide band gap (3.1 eV), high hole mobility (> 40 cm2 V− 1 s− 1 in bulk) and large …
Recent progress on ZnO‐based metal‐semiconductor field‐effect transistors and their application in transparent integrated circuits
H Frenzel, A Lajn, H Von Wenckstern… - Advanced …, 2010 - Wiley Online Library
Metal‐semiconductor field‐effect transistors (MESFETs) are widely known from opaque high‐
speed GaAs or high‐power SiC and GaN technology. For the emerging field of transparent …
speed GaAs or high‐power SiC and GaN technology. For the emerging field of transparent …
Transparent semiconducting oxides: Materials and devices
M Grundmann, H Frenzel, A Lajn… - … status solidi (a), 2010 - Wiley Online Library
Transparent conductive oxides (TCOs) are a well‐known material class allowing Ohmic
conduction. A large free carrier concentration in the 1021 cm− 3 range and high conductivity …
conduction. A large free carrier concentration in the 1021 cm− 3 range and high conductivity …
Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β‐Ga2O3 thin films grown by pulsed laser deposition
D Splith, S Müller, F Schmidt… - … status solidi (a), 2014 - Wiley Online Library
We have investigated the electrical properties of Cu Schottky contacts (SCs) on ()‐oriented β‐
Ga2O3 thin films, which have been grown by pulsed laser deposition (PLD). The I–V …
Ga2O3 thin films, which have been grown by pulsed laser deposition (PLD). The I–V …
Silver oxide Schottky contacts on n-type ZnO
A method of fabricating highly rectifying Schottky contacts on n-type ZnO using silver oxide
has been developed and used to compare diode performance on hydrothermal and melt …
has been developed and used to compare diode performance on hydrothermal and melt …