Lasers continue to be an amazingly robust field of activity. Anyone seeking a photon source
is now confronted with an enormous number of possible lasers and laser wavelengths to …

We describe the metal-organic chemical vapor deposition (MOCVD) of InAsSb/InAs multiple
quantum well (MQW) and InAsSb/InAsP strained-layer superlattice (SLS) active regions for …

We report on the structural and optical properties of GaSbBi single layers and GaSbBi/GaSb
quantum well heterostructures grown by molecular beam epitaxy on GaSb substrates …

Multiple quantum‐well diode lasers incorporating compressively strained InAs0. 935Sb0.
065 wells and tensile‐strained In0. 15Al0. 85As0. 9Sb0. 1 barriers are reported. These …

Gain‐guided, injection lasers using AlAsSb for optical confinement and a strained
InAsSb/InAs multiquantum well active region were grown by metalorganic chemical vapor …

3 volume multi-pass absorption cell with an 18-m path length. The methane mixing ratio was
determined by comparing the direct optical absorption measured in the sample with that …

Mid-infrared LEDs based on InGaAs, InAsSb (P) and InGaAsSb alloys with an emission
band of 0.3–0.5 μm, output power in the 10–50 μW range and long-term operation up to 20 …

Abstract High performance mid-infrared (2–5 μm) laser diodes are needed for applications
such as high resolution and high sensitivity chemical gas analysis and atmospheric pollution …

This textbook provides a theoretical background for contemporary trends in solid-state
theory and semiconductor device physics. It discusses advanced methods of quantum …

The properties of InAsSb/InAsP strained-layer superlattice (SLS), midwave infrared
materials, and devices are reported. SLSs were grown by metal-organic chemical vapor …