Defect engineering in multinary earth‐abundant chalcogenide photovoltaic materials

D Shin, B Saparov, DB Mitzi - Advanced Energy Materials, 2017 - Wiley Online Library
Application of zinc‐blende‐related chalcogenide absorbers such as CdTe and Cu (In, Ga)
Se2 (CIGSe) has enabled remarkable advancement in laboratory‐and commercial‐scale …

Ultralow Lattice Thermal Conductivity at Room Temperature in Cu4TiSe4

B Koley, A Lakshan, PR Raghuvanshi… - Angewandte …, 2021 - Wiley Online Library
Ultralow thermal conductivity draws great attention in a variety of fields of applications such
as thermoelectrics and thermal barrier coatings. Herein, the crystal structure and transport …

Sulvanites: The Promise at the Nanoscale

R Prado-Rivera, CY Chang, M Liu, CY Lai, DR Radu - Nanomaterials, 2021 - mdpi.com
The class of ternary copper chalcogenides Cu3MX4 (M= V, Nb, Ta; X= S, Se, Te), also
known as the sulvanite family, has attracted attention in the past decade as featuring …

Systematic study on the optoelectronic and elastic properties of Cu-based ternary chalcogenides: using ab-initio approach

M Abubakr, Z Abbas, S Rehman, NU Hassan… - Materials Science in …, 2023 - Elsevier
The first principles-based GGA approach is used to investigate the elastic and optoelectronic
properties of Cu-based ternary chalcogenides QCu 3 Te 4 (Q= Ta, V, Nb) to explore their …

Challenges Reconciling Theory and Experiments in the Prediction of Lattice Thermal Conductivity: The Case of Cu-Based Sulvanites

I Caro-Campos, MM González-Barrios… - Chemistry of …, 2024 - ACS Publications
The exploration of large chemical spaces in search of new thermoelectric materials requires
the integration of experiments, theory, simulations, and data science. The development of …

Effect of Nb, Ta and V replacements on electronic, optical and elastic properties of NbCu3Se4: A GGA+ U study

Z Abbas, N Jabeen, A Hussain, F Kabir… - Journal of Solid State …, 2021 - Elsevier
Abstract Development of efficient, renewable and eco-friendly energy sources is on rise and
is the main quest of the researchers to meet the energy challenges of future due to vanishing …

The electronic structure of sulvanite structured semiconductors Cu 3 MCh 4 (M= V, Nb, Ta; Ch= S, Se, Te): prospects for optoelectronic applications

AB Kehoe, DO Scanlon, GW Watson - Journal of Materials Chemistry …, 2015 - pubs.rsc.org
The electronic structure of a family of ternary copper chalcogenide systems Cu3MCh4 (M=
V, Nb, Ta; Ch= S, Se, Te) has been explored to ascertain the compounds' potential for …

A DFT+ U study of the effect of transition metal replacements on optoelectronic and elastic properties of TmCu3S4 (Tm= V, Ta, Nb)

Z Abbas, K Fatima, M Abubakr, I Gorczyca… - Optik, 2022 - Elsevier
One of the main goals of researchers is to develop renewable, ecologic and efficient energy
sources to meet energy needs in the near future. In this context, chalcogenide materials are …

Outstanding Thermoelectric Performance of MCu3X4 (M = V, Nb, Ta; X = S, Se, Te) with Unaffected Band Degeneracy under Pressure

E Haque - ACS Applied Energy Materials, 2021 - ACS Publications
Few authors reported high TE performance in MCu3X4, reaching the figure of merit (ZT)
above 2 at 1000 K, from first-principles calculations neglecting electron–phonon scattering …

Thin film preparation and characterization of wide band gap Cu3TaQ4 (Q= S or Se) p-type semiconductors

PF Newhouse, PA Hersh, A Zakutayev, A Richard… - Thin Solid Films, 2009 - Elsevier
The structural, optical, and electronic properties of thin films of a family of wide band gap
(Eg> 2.3 eV) p-type semiconductors Cu3TaQ4 (Q= S or Se) are presented. Thin films …