Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated
outstanding features in high-frequency and high-power applications. This paper reviews …

There is a great interest in wide-bandgap semiconductor devices and most recently in
monolithic GaN structures for power electronics applications. In this paper, vertical pn diodes …

In this letter, vertical GaN transistors fabricated on bulk GaN substrates are discussed. A
threshold voltage of 0.5 V and saturation current> 2.3 A are demonstrated. The measured …

Avalanche multiplication characteristics in a reverse-biased homoepitaxial GaN p–n junction
diode are experimentally investigated at 223–373 K by novel photomultiplication …

In this paper, vertical pn diodes fabricated on pseudobulk gallium nitride (GaN) substrates
are discussed. The measured devices demonstrate breakdown voltages of 2600 V with a …

There is a great interest in wide band-gap semiconductor devices for power electronics
application. In this letter, vertical GaN pn diodes fabricated on bulk GaN substrates are …

This paper reports on vertical GaN Schottky barrier diodes (SBDs) fabricated on a free-
standing GaN substrate with different sizes of Schottky electrode. The fabricated SBDs with …

We demonstrate a single-chip switch-mode boost converter that features a monolithically
integrated lateral field-effect rectifier (L-FER) and a normally off transistor switch. The circuit …

A high electron mobility transistor (HEMT)-compatible power lateral field-effect rectifier (L-
FER) with low turn-on voltage is demonstrated using the same fabrication process as that for …

There is great interest in wide band-gap semiconductor devices and most recently in vertical
GaN structures for power electronic applications. In this paper initial reliability studies of …