Structural, morphological, optical and electrical properties of the Ti doped-ZnO (TZO) thin film prepared by RF sputter technique

C Bairam, Y Yalçın, Hİ Efkere, E Çokduygulular… - Physica B: Condensed …, 2021 - Elsevier
In this study, the structural, morphological, optical, as well as electrical properties of the
titanium doped (wt 5%) ZnO (TZO) thin film grown with the RF sputtering system was …

Simulation study of a new InGaN p-layer free Schottky based solar cell

A Adaine, SOS Hamady, N Fressengeas - Superlattices and …, 2016 - Elsevier
On the road towards next generation high efficiency solar cells, the ternary Indium Gallium
Nitride (InGaN) alloy is a good passenger since it allows to cover the whole solar spectrum …

Evaluation of dielectric properties of Au/TZO/n–Si structure depending on frequency and voltage

B Kınacı, C Bairam, Y Yalçın, E Cokduygulular… - Journal of Materials …, 2022 - Springer
This study examined the dielectric properties of the titanium doped ZnO (TZO) thin film. The
TZO thin film was deposited on the n-type Si substrate with the RF sputtering system and the …

Modeling and experimental analysis of photovoltaic parameters of GaInP/GaAs dual junction p–i–n solar cell

B Kınaci - Brazilian Journal of Physics, 2021 - Springer
In this study, the modeling and experimental analysis of photovoltaic parameters of the
GaInP/GaAs dual–junction (DJ) p–i–n solar cell structure were examined. The design of the …

Investigations on the structural, optical and electrical properties of InxGa1-xN thin films

C Bagavath, J Kumar - Materials Chemistry and Physics, 2019 - Elsevier
The Investigations on the growth of In x Ga 1-x N thin films on silicon (100) substrate at
different temperatures via nitridation of the deposited indium gallium oxide. The estimation …

Effects of the unintentional background concentration, indium composition and defect density on the performance of InGaN pin homojunction solar cells

S Wu, L Cheng, Q Wang - Superlattices and Microstructures, 2018 - Elsevier
We theoretically investigate the effects of the unintentional background concentration,
indium composition and defect density of intrinsic layer (i-layer) on the photovoltaic …

TCAD based performance assessment of Indium Gallium Nitride based single junction solar cells for different mole fractions of Indium

V Chandra, ADD Dwivedi, N Sinha - Optical and Quantum Electronics, 2021 - Springer
The tailoring the band gap energy of the ternary Indium Gallium Nitride (In x Ga (1− x) N)
alloy shows a good spectral match with a range of wavelength in electromagnetic spectrum …

Structural, optical and electrical characterization of dilute nitride GaP1−x−yAsyNx structures grown on Si and GaP substrates

T Sertel, Y Ozen, SS Cetin, MK Ozturk… - Journal of Materials …, 2018 - Springer
The structural, optical and electrical properties of dilute nitride p–n junction GaP 1− x− y As y
N x structures grown on n-type GaP (100) and n-type Si (100) misoriented by 4° towards the …

Etude et réalisation de l'effet de l'ombrage sur les panneaux photovoltaïques

R KHALED KHOUDJA, FZ KHEIR - 2023 - dspace.univ-tiaret.dz
Ce travail s' intéresse à l'effet de l'ombrage sur un système photovoltaïque est son impact
sur les différentes caractéristiques du GPV. Pour que ce système fonctionne à sa puissance …

Improved and analysis of the maximum power point based on PSO, PO and INC algorithms in photovoltaic systems

H Salah, M Fateh - Studies in Engineering and Exact …, 2024 - ojs.studiespublicacoes.com.br
In this paper, three techniques for tracking the maximum power point (MPPT) of a
photovoltaic generator (GPV) using Matlab Simulink were presented, an extensive …