Nonlinear properties of ballistic nanoelectronic devices
Advanced lithographic techniques allow the fabrication of strongly confined semiconductor
nanostructures in which carriers travel without suffering from inelastic scattering even for …
nanostructures in which carriers travel without suffering from inelastic scattering even for …
Graphene nanoribbons for electronic devices
Z Geng, B Hähnlein, R Granzner, M Auge… - Annalen der …, 2017 - Wiley Online Library
Graphene nanoribbons show unique properties and have attracted a lot of attention in the
recent past. Intensive theoretical and experimental studies on such nanostructures at both …
recent past. Intensive theoretical and experimental studies on such nanostructures at both …
Operation and high-frequency performance of nanoscale unipolar rectifying diodes
By means of the microscopic transport description supplied by a semiclassical two-
dimensional Monte Carlo simulator, we provide an in depth explanation of the operation …
dimensional Monte Carlo simulator, we provide an in depth explanation of the operation …
Physics of carrier-transport mechanisms and ultra-small scale phenomena for theoretical modelling of nanometer MOS transistors from diffusive to ballistic regimes of …
VK Khanna - Physics Reports, 2004 - Elsevier
The continuous downsizing of MOSFET geometries is motivated by the need for higher
packing density and device speed together with low supply voltage operation for low-power …
packing density and device speed together with low supply voltage operation for low-power …
Searching for THz Gunn oscillations in GaN planar nanodiodes
A Iniguez-De-La-Torre, I Íñiguez-De-La-Torre… - Journal of Applied …, 2012 - pubs.aip.org
A detailed study of GaN-based planar asymmetric nanodiodes, promising devices for the
fabrication of room temperature THz Gunn oscillators, is reported. By using Monte Carlo …
fabrication of room temperature THz Gunn oscillators, is reported. By using Monte Carlo …
Influence of the surface charge on the operation of ballistic T-branch junctions: a self-consistent model for Monte Carlo simulations
We analyse the influence of the surface charge on the operation of ballistic T-branch
junctions by means of a semi-classical 2D Monte Carlo simulator. We propose a new self …
junctions by means of a semi-classical 2D Monte Carlo simulator. We propose a new self …
Nonlinear effects in T-branch junctions
The negative potential appearing at the central branch of T-branch junctions (TBJs) when
biasing left and right contacts in push-pull fashion has been found to appear under high …
biasing left and right contacts in push-pull fashion has been found to appear under high …
Modeling and simulation of a graphene-based three-terminal junction rectifier
In this paper, we demonstrate the simulation of a graphene-based three-terminal junction
using semi-classical drift–diffusion modeling. The DC and AC simulations are carried out …
using semi-classical drift–diffusion modeling. The DC and AC simulations are carried out …
Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors
Abstract Design optimization of the InAs self-switching diode (SSD) intended for direct zero-
bias THz detection is presented. The SSD, which consists of nanometer-sized channels in …
bias THz detection is presented. The SSD, which consists of nanometer-sized channels in …
THz operation of self-switching nano-diodes and nano-transistors
By means of the microscopic transport description supplied by a semiclassical 2D Monte
Carlo simulator, we provide an in depth explanation of the operation (based on electrostatic …
Carlo simulator, we provide an in depth explanation of the operation (based on electrostatic …