Nonlinear properties of ballistic nanoelectronic devices

L Worschech, D Hartmann… - Journal of Physics …, 2005 - iopscience.iop.org
Advanced lithographic techniques allow the fabrication of strongly confined semiconductor
nanostructures in which carriers travel without suffering from inelastic scattering even for …

Graphene nanoribbons for electronic devices

Z Geng, B Hähnlein, R Granzner, M Auge… - Annalen der …, 2017 - Wiley Online Library
Graphene nanoribbons show unique properties and have attracted a lot of attention in the
recent past. Intensive theoretical and experimental studies on such nanostructures at both …

Operation and high-frequency performance of nanoscale unipolar rectifying diodes

J Mateos, BG Vasallo, D Pardo, T González - Applied Physics Letters, 2005 - pubs.aip.org
By means of the microscopic transport description supplied by a semiclassical two-
dimensional Monte Carlo simulator, we provide an in depth explanation of the operation …

Physics of carrier-transport mechanisms and ultra-small scale phenomena for theoretical modelling of nanometer MOS transistors from diffusive to ballistic regimes of …

VK Khanna - Physics Reports, 2004 - Elsevier
The continuous downsizing of MOSFET geometries is motivated by the need for higher
packing density and device speed together with low supply voltage operation for low-power …

Searching for THz Gunn oscillations in GaN planar nanodiodes

A Iniguez-De-La-Torre, I Íñiguez-De-La-Torre… - Journal of Applied …, 2012 - pubs.aip.org
A detailed study of GaN-based planar asymmetric nanodiodes, promising devices for the
fabrication of room temperature THz Gunn oscillators, is reported. By using Monte Carlo …

Influence of the surface charge on the operation of ballistic T-branch junctions: a self-consistent model for Monte Carlo simulations

I Iñiguez-De-La-Torre, J Mateos… - Semiconductor …, 2007 - iopscience.iop.org
We analyse the influence of the surface charge on the operation of ballistic T-branch
junctions by means of a semi-classical 2D Monte Carlo simulator. We propose a new self …

Nonlinear effects in T-branch junctions

J Mateos, BG Vasallo, D Pardo… - IEEE Electron …, 2004 - ieeexplore.ieee.org
The negative potential appearing at the central branch of T-branch junctions (TBJs) when
biasing left and right contacts in push-pull fashion has been found to appear under high …

Modeling and simulation of a graphene-based three-terminal junction rectifier

A Garg, N Jain, AK Singh - Journal of Computational Electronics, 2018 - Springer
In this paper, we demonstrate the simulation of a graphene-based three-terminal junction
using semi-classical drift–diffusion modeling. The DC and AC simulations are carried out …

Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors

A Westlund, P Sangaré, G Ducournau… - Solid-State …, 2015 - Elsevier
Abstract Design optimization of the InAs self-switching diode (SSD) intended for direct zero-
bias THz detection is presented. The SSD, which consists of nanometer-sized channels in …

THz operation of self-switching nano-diodes and nano-transistors

J Mateos, AM Song, BG Vasallo, D Pardo… - …, 2005 - spiedigitallibrary.org
By means of the microscopic transport description supplied by a semiclassical 2D Monte
Carlo simulator, we provide an in depth explanation of the operation (based on electrostatic …