High-resistivity with PN interface passivation in 22 nm FD-SOI technology for low-loss passives at RF and millimeter-wave frequencies
In this paper, GlobalFoundries' 22 nm fully depleted (FD) silicon-on-insulator (SOI) process
is run on standard and high-resistivity wafers with a specially designed PN junctions …
is run on standard and high-resistivity wafers with a specially designed PN junctions …
RF performance of Standard, High-Resistivity and Trap-Rich Silicon substrates down to cryogenic temperature
Q Berlingard, M Moulin, JP Michel… - … 2023-IEEE 53rd …, 2023 - ieeexplore.ieee.org
We investigate the temperature-dependent RF response of different types of silicon
substrates (standard, high-resistivity and trap-rich) through measurements performed on …
substrates (standard, high-resistivity and trap-rich) through measurements performed on …