Resistive random access memory (RRAM): an overview of materials, switching mechanism, performance, multilevel cell (MLC) storage, modeling, and applications
In this manuscript, recent progress in the area of resistive random access memory (RRAM)
technology which is considered one of the most standout emerging memory technologies …
technology which is considered one of the most standout emerging memory technologies …
[HTML][HTML] Resistive switching phenomena: A review of statistical physics approaches
Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
Resistive random access memory (ReRAM) based on metal oxides
H Akinaga, H Shima - Proceedings of the IEEE, 2010 - ieeexplore.ieee.org
In this paper, we review the recent progress in the resistive random access memory
(ReRAM) technology, one of the most promising emerging nonvolatile memories, in which …
(ReRAM) technology, one of the most promising emerging nonvolatile memories, in which …
Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
This review article summarized the recent understanding of resistance switching (RS)
behavior in several binary oxide thin film systems. Among the various RS materials and …
behavior in several binary oxide thin film systems. Among the various RS materials and …
Light-enhanced molecular polarity enabling multispectral color-cognitive memristor for neuromorphic visual system
An optoelectronic synapse having a multispectral color-discriminating ability is an essential
prerequisite to emulate the human retina for realizing a neuromorphic visual system. Several …
prerequisite to emulate the human retina for realizing a neuromorphic visual system. Several …
High‐performance solution‐processed organo‐metal halide perovskite unipolar resistive memory devices in a cross‐bar array structure
Resistive random access memories can potentially open a niche area in memory technology
applications by combining the advantages of the long endurance of dynamic random …
applications by combining the advantages of the long endurance of dynamic random …
Electrode dependence of filament formation in HfO2 resistive-switching memory
This study investigates bipolar and nonpolar resistive-switching of HfO 2 with various metal
electrodes. Supported by convincing physical and electrical evidence, it is our contention …
electrodes. Supported by convincing physical and electrical evidence, it is our contention …
A collective study on modeling and simulation of resistive random access memory
In this work, we provide a comprehensive discussion on the various models proposed for the
design and description of resistive random access memory (RRAM), being a nascent …
design and description of resistive random access memory (RRAM), being a nascent …
Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories
NiO films display unipolar resistance switching characteristics, due to the electrically
induced formation and rupture of nanofilaments. While the applicative interest for possible …
induced formation and rupture of nanofilaments. While the applicative interest for possible …
Physical and chemical mechanisms in oxide-based resistance random access memory
KC Chang, TC Chang, TM Tsai, R Zhang… - Nanoscale research …, 2015 - Springer
In this review, we provide an overview of our work in resistive switching mechanisms on
oxide-based resistance random access memory (RRAM) devices. Based on the …
oxide-based resistance random access memory (RRAM) devices. Based on the …