Chip-scale GaN integration
Abstract Blue LEDs and HEMTs based on III-Nitride have been flourishing commercially
across the globe, thanks largely to breakthroughs in the material quality of the wide …
across the globe, thanks largely to breakthroughs in the material quality of the wide …
Recent advancement on micro-/nano-spherical lens photolithography based on monolayer colloidal crystals
Z Zhang, C Geng, Z Hao, T Wei, Q Yan - Advances in colloid and interface …, 2016 - Elsevier
Highly ordered nanostructures have gained substantial interest in the research community
due to their fascinating properties and wide applications. Micro-/nano-spherical lens …
due to their fascinating properties and wide applications. Micro-/nano-spherical lens …
Photon management of GaN-based optoelectronic devices via nanoscaled phenomena
Photon management is essential in improving the performances of optoelectronic devices
including light emitting diodes, solar cells and photo detectors. Beyond the advances in …
including light emitting diodes, solar cells and photo detectors. Beyond the advances in …
Nano-imaging enabled via self-assembly
Imaging object details with length scales below approximately 200 nm has been historically
difficult for conventional microscope objective lenses because of their inability to resolve …
difficult for conventional microscope objective lenses because of their inability to resolve …
Indium gallium nitride-based ultraviolet, blue, and green light-emitting diodes functionalized with shallow periodic hole patterns
In this study, we investigated the improvement in the light output power of indium gallium
nitride (InGaN)-based ultraviolet (UV), blue, and green light-emitting diodes (LEDs) by …
nitride (InGaN)-based ultraviolet (UV), blue, and green light-emitting diodes (LEDs) by …
Improved light extraction efficiency of a high-power GaN-based light-emitting diode with a three-dimensional-photonic crystal (3-D-PhC) backside reflector
YC Chang, JK Liou, WC Liu - IEEE Electron Device Letters, 2013 - ieeexplore.ieee.org
An interesting approach to improving the light extraction efficiency of high-power GaN-based
light-emitting diodes (LEDs) by the use of a 3-D-photonic crystal (3-D-PhC) backside …
light-emitting diodes (LEDs) by the use of a 3-D-photonic crystal (3-D-PhC) backside …
Progress and prospects of GaN-based LEDs using nanostructures
LX Zhao, ZG Yu, B Sun, SC Zhu, PB An… - Chinese …, 2015 - iopscience.iop.org
Progress with GaN-based light emitting diodes (LEDs) that incorporate nanostructures is
reviewed, especially the recent achievements in our research group. Nano-patterned …
reviewed, especially the recent achievements in our research group. Nano-patterned …
Improved optical and electrical performances of GaN-based light emitting diodes with nano truncated cone SiO2 passivation layer
P Zuo, B Zhao, S Yan, G Yue, H Yang, Y Li… - Optical and Quantum …, 2016 - Springer
GaN-based light emitting diodes (LEDs) with nano truncated cone SiO 2 passivation layer
via laser interference lithography and inductively coupled plasma dry etching technology …
via laser interference lithography and inductively coupled plasma dry etching technology …
Colloidal etching of deep ultraviolet LED with improved light extraction efficiency
Z Zhang, Y Cao, J Liu, Q Lv, J Liu, MA Habila… - Optical Materials, 2024 - Elsevier
In order to increase the light extraction efficiency (LEE) of AlGaN deep ultraviolet light-
emitting diodes (DUV LEDs), this study employed a sapphire substrate with a microlens …
emitting diodes (DUV LEDs), this study employed a sapphire substrate with a microlens …
Enhancement of luminous intensity emission from incoherent LED light sources within the detection angle of 10 using metalenses
In this work, we present metalenses (MLs) designed to enhance the luminous intensity of
incoherent light-emitting diodes (LEDs) within the detection angles of 0° and 10°. The …
incoherent light-emitting diodes (LEDs) within the detection angles of 0° and 10°. The …