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Multifunctional ultraviolet-C micro-LED with monolithically integrated photodetector for optical wireless communication
X Shan, S Zhu, P Qiu, Z Qian, R Lin… - Journal of Lightwave …, 2021 - ieeexplore.ieee.org
In this paper, a multifunctional ultraviolet-C (UVC) micro-LED with monolithically integrated
photodetector (PD) based on AlGaN multiple quantum wells (MQWs) was fabricated. We …
photodetector (PD) based on AlGaN multiple quantum wells (MQWs) was fabricated. We …
N-algan free deep-ultraviolet light-emitting diode with transverse electron injection
X Gao, J Yang, J He, B Cui, L Zhang, Z Liu, Y Ai… - ACS …, 2023 - ACS Publications
For the first time, the n-AlGaN free deep-ultraviolet light-emitting diode (DUV-LED) with
transverse electron injection by selective area regrowth (SAG) n+-GaN is demonstrated. The …
transverse electron injection by selective area regrowth (SAG) n+-GaN is demonstrated. The …
[HTML][HTML] The influence of threading dislocations propagating through an AlGaN UVC LED
During the epitaxy of AlGaN on sapphire for deep UV emitters, significant lattice mismatch
leads to highly strained heterojunctions and the formation of threading dislocations …
leads to highly strained heterojunctions and the formation of threading dislocations …
Core–Shell Nanorods as Ultraviolet Light-Emitting Diodes
Existing barriers to efficient deep ultraviolet (UV) light-emitting diodes (LEDs) may be
reduced or overcome by moving away from conventional planar growth and toward three …
reduced or overcome by moving away from conventional planar growth and toward three …
Investigation of AlGaN/GaN high electron mobility transistors on Silicon (111) substrates employing multi-stacked strained layer superlattice structures
P Dalapati, S Urata, T Egawa - Superlattices and Microstructures, 2020 - Elsevier
AlGaN/GaN high electron mobility transistors (HEMTs) on Silicon (111) substrates are grown
by using multi-stacked strained superlattices layer structures. Atomic force microscopy, X-ray …
by using multi-stacked strained superlattices layer structures. Atomic force microscopy, X-ray …
[HTML][HTML] Monolayer-scale gan/aln multiple quantum wells for high power e-beam pumped uv-emitters in the 240–270 nm spectral range
Monolayer (ML)-scale GaN/AlN multiple quantum well (MQW) structures for electron-beam-
pumped ultraviolet (UV) emitters are grown on c-sapphire substrates by using plasma …
pumped ultraviolet (UV) emitters are grown on c-sapphire substrates by using plasma …
Performance and reliability of state-of-the-art commercial UVC light emitting diodes
Commercially-available, sapphire-and AlN-based ultraviolet-C light emitting diodes (UVC
LEDs) emitting in the range of 265–275 nm were evaluated and compared. Both AlN-and …
LEDs) emitting in the range of 265–275 nm were evaluated and compared. Both AlN-and …
Stress evolution in AlN growth on nano-patterned sapphire substrates
N **e, F Xu, J Wang, Y Sun, B Liu, N Zhang… - Applied Physics …, 2019 - iopscience.iop.org
The stress evolution behavior of AlN grown on nano-patterned substrates (NPSSs) has been
investigated. It is found that there are two sources of the tensile stress for AlN grown on …
investigated. It is found that there are two sources of the tensile stress for AlN grown on …
Thermal Droop Effects in AlGaN Ultraviolet-C Light-Emitting Diodes
Al-rich AlGaN based light-emitting diodes (LEDs) operating in the ultraviolet-C (UV-C)
spectral wavelength (< 280 nm) are important for various critical applications. However, to …
spectral wavelength (< 280 nm) are important for various critical applications. However, to …
Suppressing Dislocations and Excess Compressive Stress in High-Temperature-Annealed AlN Films through Macrostep-Induced Dislocation Inclination
High-temperature annealing (HTA) is a simple yet effective method for reducing threading
dislocation densities (TDDs) in AlN films. However, it often results in excess compressive …
dislocation densities (TDDs) in AlN films. However, it often results in excess compressive …