Multidomain Memristive Switching of Multilayers
We investigate the mechanism of analoglike switching of Pt 38 Mn 62/[Co/Ni] multilayers
induced by spin-orbit torques. X-ray photoemission microscopy performed during …
induced by spin-orbit torques. X-ray photoemission microscopy performed during …
Correlating spin freezing and magnetic properties in [Co/Ni] n/PtMn multilayers
Exchange-coupled ferromagnetic/antiferromagnetic (FM/AF) bilayers are widely used in spin
valves, magnetic tunnel junctions and spin–orbit torque devices. While most studies focused …
valves, magnetic tunnel junctions and spin–orbit torque devices. While most studies focused …
Use of analog spintronics device in performing neuro-morphic computing functions
S Fukami, WA Borders, A Kurenkov… - 2017 Fifth Berkeley …, 2017 - ieeexplore.ieee.org
Since spintronics devices are capable of retaining digital information as their magnetization
direction, development of nonvolatile memories, so-called magnetoresistive random access …
direction, development of nonvolatile memories, so-called magnetoresistive random access …
[PDF][PDF] Analog spintronics device for artificial neural networks
Analog spintronics device and its application to artificial neural network are discussed. The
analog device consists of antiferromagnet-ferromagnet bilayer system and is operated by …
analog device consists of antiferromagnet-ferromagnet bilayer system and is operated by …