Nanowires are filamentary crystals with a tailored diameter that can be obtained using a
plethora of different synthesis techniques. In this review, we focus on the vapor phase …

Antimonide semiconductors are suitable for low-power electronics and long-wavelength
optoelectronic applications. In recent years research on antimonide nanowires has become …

Photoconductors using vertical arrays of InAs/InAs1–x Sb x nanowires with varying Sb
composition x have been fabricated and characterized. The spectrally resolved …

Superconductor proximitized one-dimensional semiconductor nanowires with strong spin-
orbit interaction (SOI) are, at this time, the most promising candidates for the realization of …

High aspect-ratio InSb nanowires (NWs) of high chemical purity are sought for implementing
advanced quantum devices. The growth of InSb NWs is challenging, generally requiring a …

The combination of strong spin-orbit coupling, large g factors, and the coupling to a
superconductor can be used to create a topologically protected state in a semiconductor …

With the continued maturation of III–V nanowire research, expectations of material quality
should be concomitantly raised. Ideally, III–V nanowires integrated on silicon should be …

In recent years, quasi-1D semiconductor nanowires have attracted significant research
interest in the field of optoelectronic devices. Indium arsenide (InAs) nanowire, a III–V …

The effect of Sb addition on the morphology of self-catalyzed InAsSb nanowires (NWs) has
been systematically investigated. InAs NWs were grown by molecular beam epitaxy with and …

The ability to grow defect-free nanowires in lattice-mismatched material systems and to
design their properties has made them ideal candidates for applications in fields as diverse …