Printed electronics based on inorganic semiconductors: From processes and materials to devices

SK Garlapati, M Divya, B Breitung, R Kruk… - Advanced …, 2018 - Wiley Online Library
Following the ever‐expanding technological demands, printed electronics has shown
palpable potential to create new and commercially viable technologies that will benefit from …

Ultrathin InGaO thin film transistors by atomic layer deposition

J Zhang, D Zheng, Z Zhang, A Charnas… - IEEE Electron …, 2022 - ieeexplore.ieee.org
In this letter, we report on scaled ultrathin (~ 3 nm) InGaO (IGO) thin film transistors (TFTs) by
atomic layer deposition (ALD) under a low thermal budget of 250° C. The ALD-derived IGO …

Highly C‐axis Aligned ALD‐InGaO Channel Improving Mobility and Thermal Stability for Next‐Generation 3D Memory Devices

SH Ryu, HM Kim, DG Kim… - Advanced Electronic …, 2024 - Wiley Online Library
A way to obtain highly ordered and thermally stable crystalline In–Ga–O (IGO) thin films is
reported by atomic layer deposition with novel bulky dimethyl [N‐(tert‐butyl)− 2‐methoxy‐2 …

Polycrystalline InGaO Thin‐Film Transistors with Coplanar Structure Exhibiting Average Mobility of ≈78 cm2 V‐1 s‐1 and Excellent Stability for Replacing Current …

MH Rabbi, S Lee, D Sasaki, E Kawashima… - Small …, 2022 - Wiley Online Library
Highly ordered polycrystalline indium gallium oxide (PC‐IGO) film is obtained by the
crystallization of room temperature sputtered amorphous IGO on a hot plate at 350° C for 1 h …

Boron-doped peroxo-zirconium oxide dielectric for high-performance, low-temperature, solution-processed indium oxide thin-film transistor

JH Park, YB Yoo, KH Lee, WS Jang, JY Oh… - … applied materials & …, 2013 - ACS Publications
We developed a solution-processed indium oxide (In2O3) thin-film transistor (TFT) with a
boron-doped peroxo-zirconium (ZrO2: B) dielectric on silicon as well as polyimide substrate …

High Performance Amorphous In0.5Ga0.5O Thin‐Film Transistor Embedded with Nanocrystalline In2O3 Dots for Flexible Display Application

MH Rabbi, A Ali, C Park, J Jang - Advanced Electronic Materials, 2023 - Wiley Online Library
High‐performance, coplanar amorphous In0. 5Ga0. 5O (a‐IGO) thin film transistor (TFT) on a
polyimide (PI) substrate deposited by spray pyrolysis (SP) is reported. The SP a‐IGO film …

High-mobility thin-film transistors with polycrystalline In–Ga–O channel fabricated by DC magnetron sputtering

K Ebata, S Tomai, Y Tsuruma, T Iitsuka… - Applied physics …, 2012 - iopscience.iop.org
Oxide thin-film transistors (TFTs) were fabricated using a polycrystalline In–Ga–O (IGO) thin
film as the n-channel active layer by direct current magnetron sputtering. The 50-nm-thick …

Hypoeutectic Liquid Metal Printing of 2D Indium Gallium Oxide Transistors

SA Agnew, AP Tiwari, SW Ong, MS Rahman… - Small, 2024 - Wiley Online Library
Abstract 2D native surface oxides formed on low melting temperature metals such as indium
and gallium offer unique opportunities for fabricating high‐performance flexible electronics …

Aqueous solution derived amorphous indium doped gallium oxide thin-film transistors

F He, Y Qin, Y Wang, Z Lin, J Su… - IEEE Journal of the …, 2021 - ieeexplore.ieee.org
In this study, we report high-performance amorphous Ga 2 O 3 metal-oxide (AMO) thin film
transistor (TFT) using an low-temperature solution-process coupling with In alloy …

Probing the unique role of gallium in amorphous oxide semiconductors through structure–property relationships

SL Moffitt, Q Zhu, Q Ma, AF Falduto… - Advanced Electronic …, 2017 - Wiley Online Library
This study explores the unique role of Ga in amorphous (a‐) In Ga O oxide
semiconductors through combined theory and experiment. It reveals substitutional effects …