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Non-centrosymmetric crystallization in ferroelectric hafnium zirconium oxide via photon-assisted defect modulation
Abstract Ferroelectricity in Hf 1-x Zr x O 2 (HZO) thin films has garnered significant attention
for advanced memory devices. However, the challenge in understanding nanoscale …
for advanced memory devices. However, the challenge in understanding nanoscale …
Spatially selective crystallization of ferroelectric Hf0. 5Zr0. 5O2 films induced by sub-nanosecond laser annealing
In this work we study the sub-nanosecond laser-induced crystallization of 10 nm-thick atomic
layer deposited amorphous Hf 0.5 Zr 0.5 O 2 (HZO) films in an air atmosphere. We used an …
layer deposited amorphous Hf 0.5 Zr 0.5 O 2 (HZO) films in an air atmosphere. We used an …
Ferroelectricity in Ultrathin HfO2-Based Films by Nanosecond Laser Annealing
Nonvolatile memory devices based on ferroelectric Hf x Zr1–x O2 (HZO) show great promise
for back-end integrable storage and for neuromorphic accelerators, but their adoption is held …
for back-end integrable storage and for neuromorphic accelerators, but their adoption is held …
Laser-Induced Phase Control of Morphotropic Phase Boundary Hafnium–Zirconium Oxide
SM Kim, M Kim, CB Lee, U Choi… - … Applied Materials & …, 2025 - ACS Publications
A novel approach to delicately control the phase of a ferroelectric has been developed using
a continuous-wave laser scanning annealing (CW-LSA) process. After proper process …
a continuous-wave laser scanning annealing (CW-LSA) process. After proper process …
[HTML][HTML] Selective Laser-Assisted Direct Synthesis of MoS2 for Graphene/MoS2 Schottky Junction
Implementing a heterostructure by vertically stacking two-dimensional semiconductors is
necessary for responding to various requirements in the future of semiconductor technology …
necessary for responding to various requirements in the future of semiconductor technology …
Investigating Pulsed Laser Annealing of Hafnia-Zirconia Using a Dynamic Transmission Electron Microscope
A Amini, K Kohlmann, S Obernberger, A Ruediger… - 2024 - academic.oup.com
Gaining insight into transient behavior, including chemical reactions, structural deformations,
or phase transformations, is the key for comprehending fundamental phenomena in …
or phase transformations, is the key for comprehending fundamental phenomena in …
Ferroelectric Tunnel Thin-Film Transistor for Synaptic Applications
WCY Ma, CJ Su, KH Kao, TC Cho… - ECS Journal of Solid …, 2023 - iopscience.iop.org
In this work, a ferroelectric tunnel thin-film transistor (FeT-TFT) with polycrystalline-silicon
(poly-Si) channel and ferroelectric HfZrO x gate dielectric is demonstrated with analog …
(poly-Si) channel and ferroelectric HfZrO x gate dielectric is demonstrated with analog …