Complex transition-metal oxides (TMOs) are critical materials for cutting-edge electronics
and energy-related technologies, on the basis of their intriguing properties including …

NiO is a p-type wide bandgap semiconductor of use in various electronic devices ranging
from solar cells to transparent transistors. Understanding and improving its optical and …

We report that the oxygen reduction reaction (ORR) activities of (001)-oriented manganese
perovskite films decrease from 10 to 1 nm by more than an order of magnitude, which can be …

The strontium doped Mn-based perovskites have been proposed as one of the best oxygen
reduction reaction catalysts (ORRCs) to substitute the noble metal. However, few studies …

This work reports a fundamental study on the electronic structure, optical properties, and
defect chemistry of a series of Co-based spinel oxide (Co 3 O 4, ZnCo 2 O 4, and CoAl 2 O …

DOI: 10.1002/adma. 201504519 nanosecond switching times have been obtained for a
variety of nanoionic memory cells.[19–23] This so-called voltage–time dilemma has been …

In this paper, an overview of the fabrication and properties of high-quality La 0.67 Sr 0.33
MnO 3 (LSMO) thin films is given. A high-quality LSMO film combines a smooth surface …

We have investigated the evolution of the electronic properties of L a 1− x S rx Cr O 3 (0≤
x≤ 1) epitaxial films deposited by molecular beam epitaxy (MBE) using x-ray diffraction, x …

Mixed‐valence manganites gain increasing attentions thanks to their extraordinary
properties including half‐metallicity and colossal magnetoresistive response, rendering …

We have investigated the electronic and optical properties of epitaxial L a 1-x S rx Fe O 3 for
0≤ x≤ 1 prepared by molecular-beam epitaxy. Core-level and valence-band x-ray …