Semiconductor technology, which is rapidly evolving, is poised to enter a new era for which
revolutionary innovations are needed to address fundamental limitations on material and …

Ferroelectric interfacial devices consist of materials systems whose interfacial electronic
properties (such as a 2D electron gas or an interfacial magnetic spin configuration) are …

Photonic and optoelectronic devices have been limited in most two-dimensional (2D)
materials. Researchers have attempted diverse device structures, such as introducing some …

Assembling different kinds of 2D nanosheets into heterostructures presents a promising way
of designing novel artificial materials with new and improved functionalities by combining …

Ferroelectric materials with switchable electrical polarization have been widely used in
tunnel junctions, non‐volatile memories, and field‐effect transistors. Large‐area organic …

Nonvolatile memory (NVM) devices based on two-dimensional (2D) materials have recently
attracted widespread attention due to their high-density integration potential and the ability …

Black phosphorus (bP) is one of the more recently discovered layered materials. Utilizing the
hysteresis in the transfer characteristics of bP field‐effect transistors (FETs), several …

To date, various kinds of memristors have been proposed as artificial neurons and synapses
for neuromorphic computing to overcome the so-called von Neumann bottleneck in …

With the gradual decline in Moore's law, traditional silicon-based technologies have
encountered numerous challenges and limitations, prompting researchers to seek solutions …

The memristor of sandwich structure is prepared by employing the ferroelectric copolymer
poly (vinylidene fluoride/trifluoroethylene)(P (VDF‐TrFE)). The device exhibits great bipolar …