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[HTML][HTML] Triple and quadruple metal gate work function engineering to improve the performance of junctionless double surrounding gate In0. 53Ga0. 47As nanotube …
V Kumar, A Vohra - Physics Letters A, 2024 - Elsevier
In line with Moore's Law and the International Roadmap for Devices and Systems (IDRS),
shrinking MOSFET dimensions to the 3 nm technology node requires the introduction and …
shrinking MOSFET dimensions to the 3 nm technology node requires the introduction and …
A machine learning approach to accelerate reliability prediction in nanowire FETs from self-heating perspective
Abstract Nanowire Field Effect Transistors (NWFETs) have been considered as the next-
generation technology for sub-10 nm technology nodes, succeeding FinFETs. However, the …
generation technology for sub-10 nm technology nodes, succeeding FinFETs. However, the …
Temperature sensitivity of GaSb/Si/SiGe heterojunction vertical nanowire junctionless field-effect transistor for logic circuit applications
In this article, a GaSb/Si/SiGe heterojunction vertical nanowire (V-NW) junctionless field-
effect transistors (JFETs) under the influence of elevated temperature have been …
effect transistors (JFETs) under the influence of elevated temperature have been …