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[HTML][HTML] Atomic layer deposition (ALD) of metal gates for CMOS
C Zhao, J **ang - Applied Sciences, 2019 - mdpi.com
Featured Application Metal gate of CMOS devices. Abstract The continuous down-scaling of
complementary metal oxide semiconductor (CMOS) field effect transistors (FETs) had been …
complementary metal oxide semiconductor (CMOS) field effect transistors (FETs) had been …
Low-temperature microwave annealing processes for future IC fabrication—A review
YJ Lee, TC Cho, SS Chuang, FK Hsueh… - … on electron devices, 2014 - ieeexplore.ieee.org
Microwave annealing (MWA) and rapid thermal annealing (RTA) of dopants in implanted Si
are compared in their abilities to produce very shallow and highly activated junctions. First …
are compared in their abilities to produce very shallow and highly activated junctions. First …
Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics
The magnitude of the V/sub T/instability in conventional MOSFETs and MOS capacitors with
SiO/sub 2//HfO/sub 2/dual-layer gate dielectrics is shown to depend strongly on the details of …
SiO/sub 2//HfO/sub 2/dual-layer gate dielectrics is shown to depend strongly on the details of …
Mobility measurement and degradation mechanisms of MOSFETs made with ultrathin high-k dielectrics
Accurate measurements and degradation mechanisms of the channel mobility for MOSFETs
with HfO/sub 2/as the gate dielectric have been systematically studied in this paper. The …
with HfO/sub 2/as the gate dielectric have been systematically studied in this paper. The …
Modeling study of ultrathin gate oxides using direct tunneling current and capacitance-voltage measurements in MOS devices
Using both quantum mechanical calculations for the silicon substrate and a modified WKB
approximation for the transmission probability, direct tunneling currents across ultra-thin …
approximation for the transmission probability, direct tunneling currents across ultra-thin …
[ספר][B] Handbook of silicon semiconductor metrology
AC Diebold - 2001 - books.google.com
Containing more than 300 equations and nearly 500 drawings, photographs, and
micrographs, this reference surveys key areas such as optical measurements and in-line …
micrographs, this reference surveys key areas such as optical measurements and in-line …
Microcontact patterning of ruthenium gate electrodes by selective area atomic layer deposition
Patterned octadecyltrichlorosilane monolayers are used to inhibit film nucleation, enabling
selective area atomic layer deposition (ALD) of ruthenium on Si O 2 and Hf O 2 surfaces …
selective area atomic layer deposition (ALD) of ruthenium on Si O 2 and Hf O 2 surfaces …
Physical and electrical properties of noncrystalline prepared by remote plasma enhanced chemical vapor deposition
RS Johnson, G Lucovsky, I Baumvol - Journal of Vacuum Science & …, 2001 - pubs.aip.org
Noncrystalline Al 2 O 3 dielectric films have been synthesized by remote plasma enhanced
chemical vapor deposition (RPECVD) and deposited on (i) H-terminated Si (100) and (ii) on …
chemical vapor deposition (RPECVD) and deposited on (i) H-terminated Si (100) and (ii) on …
Ternary rare-earth metal oxide high-k layers on silicon oxide
C Zhao, T Witters, B Brijs, H Bender, O Richard… - Applied Physics …, 2005 - pubs.aip.org
Ternary oxides, Gd Sc O 3, Dy Sc O 3, and La Sc O 3, deposited by pulsed laser
deposition using ceramics targets of stoichiometric composition, were studied as alternative …
deposition using ceramics targets of stoichiometric composition, were studied as alternative …
Thresholding Computing with Heterogeneous Integration of Memristive Kernel with Metal‐Oxide‐Semiconductor Capacitor for Temporal Data Analysis
Precise event detection within time‐series data is increasingly critical, particularly in noisy
environments. Reservoir computing, a robust computing method widely utilized with …
environments. Reservoir computing, a robust computing method widely utilized with …