Featured Application Metal gate of CMOS devices. Abstract The continuous down-scaling of
complementary metal oxide semiconductor (CMOS) field effect transistors (FETs) had been …

Microwave annealing (MWA) and rapid thermal annealing (RTA) of dopants in implanted Si
are compared in their abilities to produce very shallow and highly activated junctions. First …

The magnitude of the V/sub T/instability in conventional MOSFETs and MOS capacitors with
SiO/sub 2//HfO/sub 2/dual-layer gate dielectrics is shown to depend strongly on the details of …

Accurate measurements and degradation mechanisms of the channel mobility for MOSFETs
with HfO/sub 2/as the gate dielectric have been systematically studied in this paper. The …

Using both quantum mechanical calculations for the silicon substrate and a modified WKB
approximation for the transmission probability, direct tunneling currents across ultra-thin …

Containing more than 300 equations and nearly 500 drawings, photographs, and
micrographs, this reference surveys key areas such as optical measurements and in-line …

Patterned octadecyltrichlorosilane monolayers are used to inhibit film nucleation, enabling
selective area atomic layer deposition (ALD) of ruthenium on Si O 2 and Hf O 2 surfaces …

Noncrystalline Al 2 O 3 dielectric films have been synthesized by remote plasma enhanced
chemical vapor deposition (RPECVD) and deposited on (i) H-terminated Si (100) and (ii) on …

Ternary oxides, Gd Sc O 3⁠, Dy Sc O 3⁠, and La Sc O 3⁠, deposited by pulsed laser
deposition using ceramics targets of stoichiometric composition, were studied as alternative …

Precise event detection within time‐series data is increasingly critical, particularly in noisy
environments. Reservoir computing, a robust computing method widely utilized with …