Nano-electronic Simulation Software (NESS): a flexible nano-device simulation platform
The aim of this paper is to present a flexible and open-source multi-scale simulation
software which has been developed by the Device Modelling Group at the University of …
software which has been developed by the Device Modelling Group at the University of …
Quantum calculations of the carrier mobility: Methodology, Matthiessen's rule, and comparison with semi-classical approaches
We discuss carrier mobilities in the quantum Non-Equilibrium Green's Functions (NEGF)
framework. We introduce a method for the extraction of the mobility that is free from contact …
framework. We introduce a method for the extraction of the mobility that is free from contact …
Study of discrete do**-induced variability in junctionless nanowire MOSFETs using dissipative quantum transport simulations
The impact of discrete do** in junctionless gate all-around n-type silicon nanowire
transistors is studied using 3-D nonequilibrium Green's functions simulations. The studied …
transistors is studied using 3-D nonequilibrium Green's functions simulations. The studied …
Extraction of mobility from quantum transport calculations of type-ii superlattices
Type-II superlattices (T2SLs) are being investigated as an alternative to traditional bulk
materials in infrared photodetectors due to predicted fundamental advantages. Subject to …
materials in infrared photodetectors due to predicted fundamental advantages. Subject to …
Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective
This paper reviews our previous theoretical studies and gives further insight into phonon
scattering in 3D small nanotransistors using non-equilibrium Green function methodology …
scattering in 3D small nanotransistors using non-equilibrium Green function methodology …
Phonon-limited low-field mobility in silicon: Quantum transport vs. linearized Boltzmann Transport Equation
R Rhyner, M Luisier - Journal of Applied Physics, 2013 - pubs.aip.org
We propose to check and validate the approximations made in dissipative quantum
transport (QT) simulations solved in the Non-equilibrium Green's Function formalism by …
transport (QT) simulations solved in the Non-equilibrium Green's Function formalism by …
Universality of short-channel effects on ultrascaled MOSFET performance
MA Pourghaderi, AT Pham… - IEEE Electron …, 2017 - ieeexplore.ieee.org
Universality of short-channel effects on saturation current of MOSFETs has been
demonstrated. The modulations of carrier injection and transmission rate have been …
demonstrated. The modulations of carrier injection and transmission rate have been …
Contact resistances in trigate and FinFET devices in a non-equilibrium Green's functions approach
We compute the contact resistances R c in trigate and FinFET devices with widths and
heights in the 4–24 nm range using a Non-Equilibrium Green's Functions approach …
heights in the 4–24 nm range using a Non-Equilibrium Green's Functions approach …
Performances of strained nanowire devices: Ballistic versus scattering-limited currents
We discuss the performances of (001) and (110) oriented gate-all-around silicon nanowire
(Si NW) transistors within a nonequilibrium Green's functions framework, taking surface …
(Si NW) transistors within a nonequilibrium Green's functions framework, taking surface …
Impact of precisely positioned dopants on the performance of an ultimate silicon nanowire transistor: A full three-dimensional NEGF simulation study
In this paper, we report the first systematic study of quantum transport simulation of the
impact of precisely positioned dopants on the performance of ultimately scaled gate-all …
impact of precisely positioned dopants on the performance of ultimately scaled gate-all …