Graphene-based micro-electromechanical systems (MEMS) are very promising candidates
for next generation miniaturized, lightweight, and ultra-sensitive devices. In this review, we …

Arming metasurface with active materials furnishes a feasible solution to dynamically control
over terahertz (THz) waves, which is extremely significant for the realization of upcoming …

The promising and versatile applications of low dimensional materials are largely due to
their surface properties, which along with their underlying electronic structures have been …

Incorporating semiconductors as active media into metamaterials offers opportunities for a
wide range of dynamically switchable/tunable, technologically relevant optical functionalities …

Semiconductor light-emitters compatible with standard Si integration technology (SIT) are of
particular interest for overcoming limitations in the operating speed of microelectronic …

An efficient monolithically integrated light source with complementary metal-oxide-
semiconductor (CMOS) compatibility remains the missing component to enable Si photonics …

Low-cost, less-toxic, and abundantly-produced Ge1− xSnx alloys are an interesting class of
narrow energy-gap semiconductors that received noteworthy interest in optical technologies …

Germanium (Ge) is a group-IV indirect band gap semiconductor, and therefore bulk Ge
cannot emit light efficiently. However, the direct band gap energy is close to the indirect one …

Silicon (Si) and/or germanium (Ge) nanomembranes (NMs) play crucial roles in various
applications, including conventional microelectronics, as well as recently emerging high …

Germanium is a strong candidate as a laser source for silicon photonics. It is widely
accepted that the band structure of germanium can be altered by tensile strain so as to …