Wide-band-gap II–VI semiconductors have a potential for a variety of applications especially
in the areas of light-emitting and light-detecting devices, photovoltaic conversion (solar …

We present a systematic study of the mechanical properties of bulk Si, GaP, GaAs and ZnSe
semiconducting materials. Nanoindentation tests have been performed on the (001) surface …

Abstract Cd 1− x Zn x Te mixed crystals investigated in this work were grown from the melt
using the vertical Bridgman–Stockbarger method in the whole range of composition 0< x< 1 …

This work presents the results of the investigations on the thermal and optical properties of
materials exhibiting high optical absorption. As test samples, some II-VI binary …

Abstract Cd1‐xBexSe and Cd1‐xMgxSe solid solutions were grown from the melt by the
high pressure Bridgman method. Optical, luminescence and photothermal properties of …

Zn 1− x− y Be x Mg y Se mixed crystals investigated in this work were grown from the melt by
the high pressure high temperature modified Bridgman method in the range of composition …

The band lineups at the strained layer interfaces, in Zn x Cd1–x Te/ZnTe quantum dot
nanostructure for various Zn alloy content, are computed using model solid theory with an …

The random Zn 1-x Be x Se zincblende alloy is known to exhibit a peculiar three-mode
[1×(Zn-Se), 2×(Be-Se)] vibration pattern near the Brillouin zone (BZ) center, of the so-called …

We present a study of the nanoindentation behaviour of Zn1− xBexSe heteroepitaxial layers
grown onto (001)-oriented GaP and GaAs substrates in the whole composition range 0≤ …

We report photoluminescence (PL) studies of high-quality Zn1− xBexSe films grown by
molecular beam epitaxy (MBE) on GaAs substrates by use of a novel growth method of Be …