Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors
J Yang, K Liu, X Chen, D Shen - Progress in Quantum Electronics, 2022 - Elsevier
Owing to their novel physical properties, semiconductors have penetrated almost every
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …
[HTML][HTML] Toward emerging gallium oxide semiconductors: A roadmap
Owing to the advantages of ultra-wide bandgap and rich material systems, gallium oxide (Ga
2 O 3) has emerged as a highly viable semiconductor material for new researches. This …
2 O 3) has emerged as a highly viable semiconductor material for new researches. This …
Ultra-wide bandgap semiconductor Ga2O3 power diodes
J Zhang, P Dong, K Dang, Y Zhang, Q Yan… - Nature …, 2022 - nature.com
Ultra-wide bandgap semiconductor Ga2O3 based electronic devices are expected to
perform beyond wide bandgap counterparts GaN and SiC. However, the reported power …
perform beyond wide bandgap counterparts GaN and SiC. However, the reported power …
6 kV/3.4 mΩ·cm2 Vertical β-Ga2O3 Schottky Barrier Diode With BV2/Ron,sp Performance Exceeding 1-D Unipolar Limit of GaN and SiC
P Dong, J Zhang, Q Yan, Z Liu, P Ma… - IEEE Electron …, 2022 - ieeexplore.ieee.org
In this work, we show that the-Ga 2 O 3 Schottky Barrier Diode (SBD) can perform beyond
the 1-D unipolar limit of the SiC and GaN by employing a deep trench with filled thick SiO 2 …
the 1-D unipolar limit of the SiC and GaN by employing a deep trench with filled thick SiO 2 …
Demonstration of 4.7 kV breakdown voltage in NiO/β-Ga2O3 vertical rectifiers
Vertical heterojunction NiO/β n-Ga 2 O/n+ Ga 2 O 3 rectifiers employing NiO layer extension
beyond the rectifying contact for edge termination exhibit breakdown voltages (VB) up to 4.7 …
beyond the rectifying contact for edge termination exhibit breakdown voltages (VB) up to 4.7 …
2.41 kV Vertical P-Nio/n-Ga2O3 Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm2
Y Wang, H Gong, Y Lv, X Fu, S Dun… - … on Power Electronics, 2021 - ieeexplore.ieee.org
In this letter, high-performance p-NiO/β-Ga 2 O 3 heterojunction diodes (HJDs) with
composite terminal structures, a p-NiO junction termination extension (JTE), and a small …
composite terminal structures, a p-NiO junction termination extension (JTE), and a small …
2.5 kV Vertical Ga2O3 Schottky Rectifier With Graded Junction Termination Extension
This work demonstrates vertical Ga2O3 Schottky barrier diodes (SBDs) with a novel junction
termination extension (JTE) comprising multiple layers of sputtered p-type nickel oxide …
termination extension (JTE) comprising multiple layers of sputtered p-type nickel oxide …
Low defect density and small I− V curve hysteresis in NiO/β-Ga2O3 pn diode with a high PFOM of 0.65 GW/cm2
In this Letter, we report a high-performance NiO/β-Ga 2 O 3 pn heterojunction diode with an
optimized interface by annealing. The electrical characteristics of the pn diode without …
optimized interface by annealing. The electrical characteristics of the pn diode without …
A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga2O3 for Device Applications
Ultrawide bandgap β-gallium oxide (β-Ga2O3) is emerging as a viable candidate for next-
generation high-power electronics, including Schottky barrier diodes (SBDs) and field-effect …
generation high-power electronics, including Schottky barrier diodes (SBDs) and field-effect …
Demonstration of β-Ga2O3 Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm2 or a 5A/700 V Handling Capabilities
Y Lv, Y Wang, X Fu, S Dun, Z Sun, H Liu… - … on Power Electronics, 2020 - ieeexplore.ieee.org
In this article, we report on demonstrating the first vertical β-Ga 2 O 3 junction barrier
Schottky (JBS) diode with the implementation of thermally oxidized p-type NiO to …
Schottky (JBS) diode with the implementation of thermally oxidized p-type NiO to …