Recent decades have witnessed flourishing prosperity of III-nitride emitters in solid-state
lighting and high-resolution displays. As one of the widely used substrates, sapphire shows …

Micro-LEDs have been hailed as the next generation display technology due to the
advantages of high brightness, high ambient contrast ratio, and high reliability. The In x Ga 1 …

InGaN-based LEDs are efficient light sources in the blue–green light range and have been
successfully commercialized in the last decades. Extending their spectral range to the red …

This study showcases a method for achieving high-performance yellow and red micro-LEDs
through precise control of indium content within quantum wells. By employing a hybrid …

We study the desorption of In in InGaN nanowire (NW) growth on Si, generating a unique
light emitter. With increasing growth temperature above the onset of In desorption, uniform …

In this study, we have demonstrated the potential of InGaN-based red micro-LEDs with
single quantum well (SQW) structure for visible light communication applications. Our …

A red nanowire LED with an InGaN bulk active region, directly grown on a p-Si (111)
substrate, is demonstrated. The LED exhibits relatively good wavelength stability upon …

We investigated the effects of size on electrical and optical properties of InGaN-based red
light-emitting diodes (LEDs) by designing rectangular chips with different mesa lengths …

Fabrication of indium tin oxide (ITO) was optimized for InGaN-based amber/red light-emitting
diodes (LEDs). A radiofrequency sputtering reduced the sheet resistivity of ITO at low …

We demonstrate the effectiveness of a hybrid multiple-quantum-wells (MQWs) structure in
InGaN-based orange light-emitting diodes (LEDs) grown by metalorganic vapor phase …