Over the past few decades, significant progress has been made in the field of photonic
processing of electronic materials using a variety of light sources. Several of these …

Since 2010, vacuum‐processed oxide semiconductors have greatly improved with the
publication of more than 1,300 related papers. Although the number of researches on oxide …

The quest for low power becomes highly compelling in newly emerging application areas
related to wearable devices in the Internet of Things. Here, we report on a Schottky-barrier …

The effect of gallium (Ga) concentration on the structural evolution of atomic-layer-deposited
indium gallium oxide (IGO)(In1–x Ga x O) films as high-mobility n-channel semiconducting …

Thin‐film transistors (TFTs) based on amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) have
attracted vast attention for use in organic light‐emitting diode (AMOLED) displays due to …

Copper (I) oxide (Cu2O), which is obtained from copper (II) oxide (CuO) through a reduction
process, is a p-type oxide material with a band gap of 2.1–2.4 eV. However, the switching …

Electrolyte‐gated transistors (EGTs) have been extensively studied as a next‐generation
neuromorphic device mimicking the biological ionic flux in synapses. However, its long‐term …

Metal–semiconductor–metal (MSM) photodetectors (PDs) are used for optoelectronic
integrated circuits (OEICs) because they allow easy integration with a pre-existing circuit …

Traditional gas sensors require an external voltage to provide a readout signal for
measuring the resistance/current changes. To reduce the power consumption and working …

Indium oxide (InO x) films were deposited at low processing temperature (150° C) by atomic
layer deposition (ALD) using [1, 1, 1-trimethyl-N-(trimethylsilyl) silanaminato] indium (InCA …