Open circuit voltage recovery in GaAsSbN-based solar cells: Role of deep N-related radiative states
In this work we investigate the effect of rapid thermal annealing (RTA) on the performance of
solar cells consisting of different GaAsSbN-based structures and correlate the device results …
solar cells consisting of different GaAsSbN-based structures and correlate the device results …
[HTML][HTML] Characteristics of OMVPE grown GaAsBi QW lasers and impact of post-growth thermal annealing
Laser diodes employing a strain-compensated GaAs 1− x Bi x/GaAs 1− y P y single quantum
well (SQW) active region were grown by organometallic vapor phase epitaxy (OMVPE). High …
well (SQW) active region were grown by organometallic vapor phase epitaxy (OMVPE). High …
On the thermal degradation of tunnel diodes in multijunction solar cells
I Rey-Stolle, I García, E Barrigón, J Olea… - AIP Conference …, 2017 - pubs.aip.org
Tunnel junctions are essential components of multijunction solar cells. These highly doped
p/n junctions provide the electrical interconnect between the subcells that constitute a …
p/n junctions provide the electrical interconnect between the subcells that constitute a …
1.25-eV GaAsSbN/Ge double-junction solar cell grown by metalorganic vapor phase epitaxy for high efficiency multijunction solar cell application
Dilute-nitride-antimonide materials grown by metalorganic vapor phase epitaxy (MOVPE)
with bandgap energies of 1.25 eV have been integrated into solar cell structures employing …
with bandgap energies of 1.25 eV have been integrated into solar cell structures employing …
[HTML][HTML] Single junction solar cell employing strain compensated GaAs0. 965Bi0. 035/GaAs0. 75P0. 25 multiple quantum wells grown by metal organic vapor phase …
Single junction solar cells employing 30-period and 50-period GaAs 0.965 Bi 0.035/GaAs
0.75 P 0.25 (Eg∼ 1.2 eV) multiple quantum wells (MQWs) as base regions were grown by …
0.75 P 0.25 (Eg∼ 1.2 eV) multiple quantum wells (MQWs) as base regions were grown by …
Impact of growth temperature and substrate orientation on dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application
Nitrogen incorporation in bulk films of GaAsN, InGaAsN, and GaAsSbN films grown by
metalorganic vapor phase epitaxy (MOVPE) on (100) and (311) B GaAs substrates was …
metalorganic vapor phase epitaxy (MOVPE) on (100) and (311) B GaAs substrates was …
Research on monolithic AlGaInP/AlGaInAs/GaInAs/Ge quadruple-junction solar cell for high efficiency lattice-matched tandem photovoltaic device
X Zhang, S Huang, J Liu, K Lin, Y Wang… - Applied Physics …, 2020 - iopscience.iop.org
Abstract Lattice-matched AlGaInP/AlGaInAs/GaInAs/GaInNAs (Sb)/Ge five-junction (5J) solar
cell can be expected to achieve a practical efficiency high as 36% under the air mass (AM0) …
cell can be expected to achieve a practical efficiency high as 36% under the air mass (AM0) …
13.2% efficiency double-hetero structure single-junction InGaAsN solar cells grown by MOVPE
Low background carbon concentration InGaAsN (E g∼ 1.18 eV), lattice-matched on a GaAs
substrate, was grown at high temperatures (∼ 600 C) using metalorganic vapor phase …
substrate, was grown at high temperatures (∼ 600 C) using metalorganic vapor phase …
Rapid thermal annealing of InAlAsSb lattice-matched to InP for top cell applications
The effect of rapid thermal annealing on the optical properties of InxAl1− xAsySb1− y was
analyzed and compared to that for In0. 52Al0. 48As. Initial ellipsometry and …
analyzed and compared to that for In0. 52Al0. 48As. Initial ellipsometry and …
A Model Describing the Band Gap Energy of the Strained In x Ga1−x N y Sb z As1−y−z Alloy (0 < x ≤ …
CZ Zhao, Q Fu, T Wei, SS Wang, KQ Lu - Journal of Electronic Materials, 2017 - Springer
The physical mechanism for the band gap evolution of the strained In x Ga 1− x N y Sb z As
1− y− z alloy is investigated. It is found that In x Ga 1− x N y Sb z As 1− y− z alloy with small …
1− y− z alloy is investigated. It is found that In x Ga 1− x N y Sb z As 1− y− z alloy with small …