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Comphy—A compact-physics framework for unified modeling of BTI
Abstract Metal-oxide-semiconductor (MOS) devices are affected by generation,
transformation, and charging of oxide and interface defects. Despite 50 years of research …
transformation, and charging of oxide and interface defects. Despite 50 years of research …
Long-term stability and reliability of black phosphorus field-effect transistors
Black phosphorus has been recently suggested as a very promising material for use in 2D
field-effect transistors. However, due to its poor stability under ambient conditions, this …
field-effect transistors. However, due to its poor stability under ambient conditions, this …
BTI analysis tool—Modeling of NBTI DC, AC stress and recovery time kinetics, nitrogen impact, and EOL estimation
A comprehensive modeling framework is presented to predict the time kinetics of negative
bias temperature instability stress and recovery during and after dc and ac stresses and also …
bias temperature instability stress and recovery during and after dc and ac stresses and also …
Understanding the excess 1/f noise in MOSFETs at cryogenic temperatures
Characterization, modeling, and development of cryo-temperature CMOS technologies (cryo-
CMOS) have significantly progressed to help overcome the interconnection bottleneck …
CMOS) have significantly progressed to help overcome the interconnection bottleneck …
Understanding BTI in SiC MOSFETs and its impact on circuit operation
The threshold voltage hysteresis in SiC power MOSFETs is rarely studied. This paper
investigates the captureand emission-time constants of positive and negative charge …
investigates the captureand emission-time constants of positive and negative charge …
Energetic map** of oxide traps in MoS2 field-effect transistors
The performance of MoS 2 transistors is strongly affected by charge trap** in oxide traps
with very broad distributions of time constants. These defects degrade the mobility and …
with very broad distributions of time constants. These defects degrade the mobility and …
A Physical Model for the Hysteresis in MoS2 Transistors
Even though the hysteresis in the gate transfer characteristics of two-dimensional (2D)
transistors is a frequently encountered phenomenon, the physics behind it are up to now …
transistors is a frequently encountered phenomenon, the physics behind it are up to now …
Highly-stable black phosphorus field-effect transistors with low density of oxide traps
Black phosphorus is considered a very promising semiconductor for two-dimensional field-
effect transistors. Initially, the main disadvantage of this material was thought to be its poor …
effect transistors. Initially, the main disadvantage of this material was thought to be its poor …
Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs
Modeling of the threshold voltage instabilities in SiC power MOSFETs is difficult due to the
fast recovery of ΔV th after positive and negative gate bias stress. This work investigates the …
fast recovery of ΔV th after positive and negative gate bias stress. This work investigates the …
Modeling of NBTI using BAT framework: DC-AC stress-recovery kinetics, material, and process dependence
Threshold voltage shift (ΔVT) due to Negative Bias Temperature Instability (NBTI) in p-
MOSFETs is modeled using the BTI Analysis Tool (BAT) framework. The ΔV T time kinetics …
MOSFETs is modeled using the BTI Analysis Tool (BAT) framework. The ΔV T time kinetics …