Germanium–tin (Ge1–x Sn x) semiconductors are a front-runner platform for compact mid-
infrared devices due to their tunable narrow bandgap and compatibility with silicon …

Heterostructures based on the GeSn nanocompound have high impact on integrated
photonics devices. The promising feature of GeSn nanostructures is its direct bandgap …

Nanowires are promising platforms for realizing ultra-compact light sources for photonic
integrated circuits. In contrast to impressive progress on light confinement and stimulated …

Complementary metal oxide semiconductor-compatible short-and midwave infrared emitters
are highly coveted for the monolithic integration of silicon-based photonic and electronic …

There is an increasing need for silicon-compatible high-bandwidth extended-short wave
infrared (e-SWIR) photodetectors (PDs) to implement cost-effective and scalable …

Compound semiconductors have been the predominant building blocks for the current
midinfrared thermophotovoltaic devices relevant to sub-heat conversion and power …

The technology to develop a large number of identical coherent light sources on an
integrated photonics platform holds the key to the realization of scalable optical and …

Tensile strained GeSn alloys are considered a key enabler for the realization of
complementary metal‐oxide‐semiconductor laser sources. However, the tensile strained …

GeSn alloys are considered a promising solution to long-sought on-chip industry-compatible
light sources. Relentless efforts to improve the performance of GeSn lasers include utilizing …

Ge 1− x Sn x semiconductors have promise for large-scale, monolithic, midinfrared
photonics and optoelectronics. However, despite the successful demonstration of several Ge …