Modern computer microprocessor chips are marvels of engineering complexity. For the
current 45 nm technology node, there may be nearly a billion transistors on a chip barely 1 …

Plasma enhanced chemical vapor deposition (PECVD) is being increasingly used for the
fabrication of transparent dielectric optical films and coatings. This involves single-layer …

Bonding characteristics of low-dielectric-constant (low-k) fluorine-incorporated silicon oxide
(SiOF) and carbon-incorporated silicon oxide (SiOC) films prepared by plasma enhanced …

(62) Division of application No. 09/330,247, filed on Jun. 10, stOCS Pattle post which directs
ther 1999, now Pat. No. 6,103,601, which is a division of tion o the chemical vapor …

This paper reviews low dielectric constant materials for interlayer dielectric films in ultralarge-
scale integrated circuit (ULSI) multilevel interconnections. The trends of ULSIs in the last …

Fluorinated amorphous carbon (a-CFx) films were studied by high-resolution x-ray
absorption, emission, and photoelectron spectroscopy. The composition and local bonding …

Fluorine incorporated diamond-like carbon (F-DLC) films were deposited by RF magnetron
sputtering method using a mixture of argon (Ar) and methane (CH4) and tetrafluoromethane …

Highly crosslinked fluorinated amorphous carbon films are obtained by increasing
deposition temperature, enhancing ion bombardment, and fine tuning the fluorine-to-carbon …

The developments in advanced interconnect technology for semiconductor logic devices for
the mitigation of plasma‐induced damage to low‐dielectric‐constant (low‐k) materials …

Thermal-induced pyrolysis of the hydrogen silsesquioxane ((HSiO1. 5) n) polymer has often
been applied as a popular straightforward method for the synthesis of silicon nanocrystals …