Together with the development of two-dimensional (2D) materials, transition metal
dichalcogenides (TMDs) have become one of the most popular series of model materials for …

Continued reduction in transistor size can improve the performance of silicon integrated
circuits (ICs). However, as Moore's law approaches physical limits, high‐performance …

Since Moore's law in the traditional semiconductor industry is facing shocks, More Moore
and More than Moore are proposed as two paths to maintain the development of the …

Conventional field-effect transistors (FETs) have long been considered a fundamental
electronic component for a diverse range of devices. However, nanoelectronic circuits based …

The substantial amount of data generated every second in the big data age creates a
pressing requirement for new and advanced data storage techniques. Luminescent …

Non‐destructive and reversible modulations of polarity and carrier concentration in
transistors are essential for complementary devices. The fabricated multi‐gated WSe2 …

Abstract Two-dimensional/two-dimensional (2D/2D) heterojunctions form one of the most
versatile technological solutions for building tunneling field effect transistors because of the …

Quantum mechanical band-to-band tunneling is a type of carrier injection mechanism that is
responsible for the electronic transport in devices like tunnel field effect transistors (TFETs) …

Owing to their superior carrier mobility, strong light–matter interactions, and flexibility at the
atomically thin thickness, two-dimensional (2D) materials are attracting wide interest for …

Abstract 2D transition metal dichalcogenide based van der Waals materials are promising
candidates to realize tunnel field effect transistors (TFETs) with a steep subthreshold swing …